Organic integrated circuits using pseudo-CMOS circuit configurations

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We fabricated the fully-solution processed organic thin-filmtransistors (TFTs) and pseudo-CMOS integrated circuits and demonstrated those TFTs andcircuits were operated successfully. We used dispenser and ink-jet printing for thefabrication processes. We used solution of metal, semiconductor, and insulator. Fabricatedfully-solution processed organic TFTs exhibited high electrical performance. Field-effectmobility exceeded 1.0 cm2/Vs and on/off ratio exceeded 105. Furthermore, we demonstratedthe room-temperature processable solution-processed organic TFTs and integrated circuitsby using room-temperature sintering silver nanoparticle ink. Fabricatedfully-solutionprocessed organic pseudo-CMOS inverter was operated even at low supplyvoltage of 5 V with excellent input-output characteristics. The fabricated 3-stagepseudo-CMOS ring-oscillator was operated at supply voltage of 20 V. The output waveshows a period of 300 Hz. This operation speed is quite is quite high among thefully-solution processed organic integrated circuits.