课题基金 / 基金详情

Fabrication of nano - structure using highly charged ions

Fabrication of nano - structure using highly charged ions
使用高电荷离子制造纳米结构
批准号:
10554017
负责人:
SAKURAI Makoto
金额:
$8.45万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B).
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 2000

项目摘要

项目成果

SAKURAI Makoto的其他基金

相关文献

中文摘要
翻译
高电荷离子在各种材料表面产生纳米级的结构修饰。高电荷离子有望成为制造纳米结构和纳米器件的有力工具。在目前的研究项目中,各种技术开发进行了可能的生产设施,使用高电荷离子的纳米器件。本项目的研究对象如下:1。将电子束离子阱(东京EBIT)产生的高电荷离子转移到与束流传输相连的辐照室的束流传输系统的研制。利用线探针技术开发新的种子离子注入息税前利润系统。高电荷离子辐照表面发射的二次电子数分布测量系统的研制。
英文摘要
Highly charged ion produces structural modification in nm scale on the surface of various materials. Highly charged ions are expected to become a powerful tool for the fabrication of nano-structure and nano-devices. In the present research project, various technical development were performed for the possible production facility of nano-devices using highly charged ions.The research subjects performed in the present project are as follows ;1. Development of beam transport system which transfer highly charged ions produced at the electron beam ion trap (Tokyo EBIT) to an irradiation chamber connected to the beam transport.2. Development of new feeding system of seed ions into the EBIT using wire probe technique.3. Development of a measurement system of the number distribution of secondary electrons emitted from the surface irradiated by highly charged ions.
期刊论文(54)
专著(0)
科研奖励(0)
会议论文
H.Shimizu: "Characteristics of the beam line at an electron beam ion trap"Rev.Sci.Instrum.. 71. 681-683 (2000)
H.Shimizu:“电子束离子陷阱的束线特征”Rev.Sci.Instrum.. 71. 681-683 (2000)
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I.Yamada: "Electron capture cross sections in slow highly charged ion-atom and -mdecule collisions"Proc.21th Int.Conf.on Phys.of Electronic and Atomic Collisions. 553 (1999)
I.Yamada:“慢速高电荷离子-原子和-mdecule碰撞中的电子捕获截面”Proc.21th Int.Conf.on Phys.of Electronic and Atomic Collisions。
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共 21 条
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