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Electronic Phenomena at the Hetero-Nanointerface Fabricated from Self-Assembled Films and Photoelectric Conversion Devices

自组装薄膜和光电转换器件制备的异质纳米界面的电子现象

基本信息

批准号：
11450129
负责人：
ONODA Mitsuyoshi
金额：
$ 7.04万
依托单位：
Himeji Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

项目摘要

Recently, research into the practical use of organic materials in electronic devices has produced excellent results. It is considered that conducting polymers with highly extended π-electron conjugated systems in their main chains are highly promising materials for organic electronic devices. Because interfaces consisting of condicting polymer/metal or conducting polymer/conducting polymer are necessary in polymer electronic devices, the electronic phenomenon at the interface is critically important to the performance and the function of such devices. The fundamental device properties are affected by interfacial properties. Accordingly, it is necessary to understand not only the properties of the conducting polymer itself, but also interfacial electronic phenomena and electronic states on a nanometer scale.A novel thin film processing technique has been developed for the fabrication of ultrathin films of conducting polymers with molecular level control over thickness and multilayer arc … More hitecture. This new self-assebly process opens up vast possibilities in applications which require large area ultrathin films of conducting polymers and more importantly in applications that can take advantage of the unique interactions achievable in the complex, supermolecular architectures of multilayer films.Photoirradiation effects of a polypyridine, PPy/poly(2-methoxy-5-dodecylozy-p-phenylene vinylene), MDOPPV heterostructure photoelectric conversion device have been investigated. The photovoltaic characteristics of the heterostructure photoelectric conversion device are considerably improved from those in single-layer photoelectric conversion device are considerably improved from those in single-layer photoelectric conversion devices. Quenching of photoluminescence both in the PPy layer film and in the MDOPPV layer film has also been observed in the PPy/MDOPPY heterostructure film. The observed photoirrsdiation effects of the heterostructure device indicate that a photoinduced charge transfer occurs between PPy and MDOPPV. However, the photoinduced charge transfer between these polymers cannot be explained by the bulk electronic energy states of the polymers. A possible mechanism, which takes modulation of electronic energy states at the interface due to a local lattice distortion into account, has been proposed.The electronic state at the conducting polymer/electrode interface in air was investigated. The Fermi level (E_F) as well as the ionization potential (Ip) at the surface of conducting polymer films coated on various substrates was observed as a function of film thickness. The E_f of the conducting polymer surface was estimated by Kelvin probe method, and the Ip was estimated by atmospheric photoelectron spectroscopy. When Al was used as the electrode material, the dependence of the EF on film thickness was much different from that of the Ip. Less

近年来，对有机材料在电子器件中的实际应用的研究取得了优异的成果。主链上具有高度延伸的π电子共轭体系的导电聚合物被认为是非常有前途的有机电子器件材料。由于导电聚合物/金属或导电聚合物/导电聚合物界面是聚合物电子器件中必不可少的界面，界面处的电子现象对器件的性能和功能至关重要。基本的器件特性受界面特性的影响。因此，不仅需要了解导电聚合物本身的性质，而且需要了解纳米尺度上的界面电子现象和电子态。本论文发展了一种新的薄膜加工技术，用于制备具有分子水平厚度控制和多层电弧放电的导电聚合物薄膜 ...更多信息体系结构这种新的自组装工艺为需要大面积导电聚合物薄膜的应用开辟了巨大的可能性，更重要的是，在可以利用多层膜的复杂超分子结构中可实现的独特相互作用的应用中开辟了巨大的可能性。（2-甲氧基-5-十二烷氧基-对苯乙炔），MDOPPV异质结构光电转换器件进行了研究。异质结构光电转换器件的光伏特性相对于单层光电转换器件中的光伏特性显著改善。在PPy/MDOPPY异质结构膜中也观察到PPy层膜和MDOPPV层膜中的光致发光的猝灭。观察到的异质结器件的光致发光效应表明，PPy和MDOPPV之间发生了光致电荷转移。然而，这些聚合物之间的光诱导电荷转移不能解释的聚合物的体电子能态。提出了一种可能的机制，该机制考虑了局部晶格畸变对界面电子能态的调制，研究了空气中导电聚合物/电极界面的电子态。测量了不同衬底上导电聚合物薄膜表面的费米能级（E_F）和电离势（Ip）随薄膜厚度的变化。用Kelvin探针法估算了导电聚合物表面的E_f，用大气光电子能谱法估算了Ip。当以Al为电极材料时，EF与Ip对膜厚的依赖性有很大不同。少