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Syntheses of Organic n-Type Semiconductors for Field-Effect Transistors

场效应晶体管有机 n 型半导体的合成

基本信息

批准号：
14340226
负责人：
SUZUKI Toshiyasu
金额：
$ 9.47万
依托单位：
Okazaki National Research Institutes
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14340226/
关键词：
transistor device organic semiconductor thin film オリゴマー

项目摘要

We have synthesized perfluoropentacene and perfluorotetracene as potential n-type semiconductors for organic field-effect transistors (OFETs). Perfluoropentacene and perfluorotetracene are dark blue and reddish-orange crystalline solids, respectively. The HOMO-LUMO gaps of perfluorinated acenes are smaller than those of the corresponding acenes. The reduction potential of perfluoropentacene is almost the same as that of C_<60>, which is known as an excellent n-type semiconductor for FETs. Perfluoropentacene and perfluorotetracene are planar molecules that adopt herringbone structures with the angles of 91.2° and 91.1°, respectively. The short CC contacts less than the sum of van der Waals radii were observed for both perfluorinated acenes. The interplanar distances are shorter than the layer separation of graphite, which may lead to high electron mobility along the stacking directions.Organic field-effect transistors (OFETs) with perfluoropentacene were fabricated using top-contact geometry, and the electron mobility of 0.11 cm^2 V^<-1> s^<-1> was observed. Bipolar OFETs with perfluoropentacene and pentacene function at both negative and positive gate voltages. The improved p-n junctions are probably because of the similar d-spacings of both acenes. Complementary inverter circuits were constructed, and the transfer characteristics exhibit a sharp inversion of the output signal with a high voltage gain.

我们合成了作为有机场效应管(OFET)的潜在n型半导体材料的全氟戊烯和全氟四茂铁。全氟戊烯和全氟四茂铁分别是深蓝色和红橙色的结晶固体。全氟并苯的HOMO-LUMO能隙比相应的并苯的HOMO-LUMO能隙小。全氟戊烯的还原电位几乎与C_&lt；60&gt；相当，C_&lt；60&gt；是一种优良的场效应管n型半导体。全氟戊烯和全氟四茂铁均为人字形平面分子，其夹角分别为91.2°和91.1°。观察到两种全氟苯的CC接触均小于范德华半径之和。采用顶接触方法制备了含全氟戊二烯的有机场效应晶体管(OFET)，观察到其电子迁移率为0.11 cm^2V^&lt；-1&gt；S^-1&gt；具有全氟并五苯和并五苯的双极型OFET在正负栅极电压下均可工作。改进的p-n结可能是由于两个苯的d间距相似所致。构造了互补的逆变器电路，传输特性表现出输出信号的急剧反转和高电压增益。