Syntheses of Organic n-Type Semiconductors for Field-Effect Transistors

我们已经合成了全氟并五苯和全氟并四苯作为潜在的n型半导体的有机场效应晶体管（OFFERS）。全氟并五苯和全氟并四苯分别为深蓝色和橙红色结晶固体。全氟并苯的HOMO-LUMO能隙比相应的并苯小。全氟并五苯的还原电位几乎与C_相同<60>，是一种性能优良的n型FET半导体材料。全氟并五苯和全氟并四苯是平面分子，分别具有91.2°和91.1°的人字形结构。短CC接触小于货车德瓦尔斯半径的总和，观察到两个全氟化并苯。层间距小于石墨的层间距，这可能导致沿堆叠方向的高电子迁移率沿着.全氟并五苯的有机场效应晶体管（OFFET）的制作使用顶部接触几何结构，并观察到的电子迁移率为0.11 cm ^2 V^<-1>s^<-1>。具有全氟并五苯和并五苯的双极OFFEX在负和正栅极电压下均起作用。改进的p-n结可能是因为两种并苯的d-间距相似。互补反相器电路的结构，和传输特性表现出一个尖锐的反相输出信号与高电压增益。

We have synthesized perfluoropentacene and perfluorotetracene as potential n-type semiconductors for organic field-effect transistors (OFETs). Perfluoropentacene and perfluorotetracene are dark blue and reddish-orange crystalline solids, respectively. The HOMO-LUMO gaps of perfluorinated acenes are smaller than those of the corresponding acenes. The reduction potential of perfluoropentacene is almost the same as that of C_<60>, which is known as an excellent n-type semiconductor for FETs. Perfluoropentacene and perfluorotetracene are planar molecules that adopt herringbone structures with the angles of 91.2° and 91.1°, respectively. The short CC contacts less than the sum of van der Waals radii were observed for both perfluorinated acenes. The interplanar distances are shorter than the layer separation of graphite, which may lead to high electron mobility along the stacking directions.Organic field-effect transistors (OFETs) with perfluoropentacene were fabricated using top-contact geometry, and the electron mobility of 0.11 cm^2 V^<-1> s^<-1> was observed. Bipolar OFETs with perfluoropentacene and pentacene function at both negative and positive gate voltages. The improved p-n junctions are probably because of the similar d-spacings of both acenes. Complementary inverter circuits were constructed, and the transfer characteristics exhibit a sharp inversion of the output signal with a high voltage gain.