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DEVELOPMENT OF RELAXOR SYSTEM PIEZOELECTRIC SINGLE CRYSTAL OSCILLATOR WITH WIDE PRACTICAL TEMPERATURE RANGE

宽实用温度范围弛豫系统压电单晶振荡器的研制

基本信息

批准号：
12555086
负责人：
YASUDA Naohiko
金额：
$ 4.42万
依托单位：
GIFU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555086/
关键词：
PIEZOEUETRIC SINGLE GKBSTAL PIEZOELECTRIC OSCILLATOR LEAD INDIUM NIOBATE-LEAD TTEANATE MORPHOTROPIC PHASE BOONDARY HIGH CURIE TEMPERATURE LEAD YTTERYBIUM NIOBIUM-LEAD TITANATE ELECTROMECHANICAL COUPLING FACTOR THERMAL ANALYSIS モルフォトロピック相境界

项目摘要

Recently much attention has been given to single crystals of solid solutions of lead-based complex perovskite relasor ferroelectrics and normal ferroelectric lead titanate systems near the morphotropic phase boundary( MPB ). These materials exhibit superior piezoelectric properties by utilizing domain engineering, for applications in ultrasonic imaging, nondestructive testing( NDT ) and actuators. The PZN-PT single crystal shows a large piezoelectric constant and large electromechanical coupling constant in the longitudinal bar mode along the [ 100 ] axis in the rhombohedral phase. However one ofthe disacfeatages rfeangle crystals P2N-PT near the MPB is their tow Curie temperature Tfc of 170-180℃. The low Tb restricts tihe operating temperature range UP to less than 85℃.Therefore, a new single crystal which has a large electromechanical coupling factar with a high Tc> 250℃ is anticipated. Lead indium niobate lead titanate ( PIN-PT ) belongs to one of the relaxer-PT systems with Tc higher than 250℃. In this work, PIN-PT single crystals near the MPB were grown successfully by a flux method The electromechanical coupling factor in rectangular bar mode k_<33>' = 78 % fax phased array ultrasonic transducers was obtained by using the rhomboherdal PIN-PT singfe oystal cdented along [ 100 ] axis. The k_<33>'= 78 % is the highest value reported so far among all piezoelectric materials with Tc higher than 250℃. The temperature dependence of the k_<33>' was investigated in poled and unpoled states. With increasing temperature, the k_<33>' decreases slightly and even at 200℃ decreases by only 5 %. Such temperature characteristics is quite attractive for practical applications. Moreover, by the more reproducible and more practical Bridgman method, PIN-PT single crystals were successfully grown, as well as a flux method.

近年来，铅基复合钙钛矿、铁电体和普通铁电钛酸铅体系固溶体的单晶研究受到了广泛的关注。这些材料通过领域工程表现出优异的压电性能，用于超声成像、无损检测（NDT）和执行器。PZN-PT单晶在菱形相中沿[100]轴的纵棒模式下具有较大的压电常数和较大的机电耦合常数。然而，在MPB附近的矩形晶体P2N-PT的缺点之一是它们的低居里温度Tfc为170-180℃。低Tb限制了工作温度范围不超过85℃。因此，人们期待一种具有大机电耦合系数和高tc> ~ 250℃的新型单晶。铌酸铅铟钛酸铅（PIN-PT）属于温度高于250℃的弛缓剂- pt体系之一。利用沿[100]轴凹进的菱形PIN-PT单晶，获得了矩形条形模式下的机电耦合系数k_<33>′= 78%的fax相控阵超声换能器。k_<33>′= 78%是目前报道的Tc高于250℃的压电材料中最高的值。研究了k_<33>'在极化和非极化状态下的温度依赖性。随着温度的升高，k_<33>′略有下降，即使在200℃时也仅下降5%。这样的温度特性在实际应用中很有吸引力。此外，通过更具重复性和实用性的Bridgman方法，成功地生长了PIN-PT单晶，以及通量法。