Development of Advanced Temperature Recording Device for Monitoring Irradiation Environment of Nuclear Power Reactor

对辐照区和未辐照区在同一面的SiC试件进行了1200 ℃温度历程监测器的性能测试。在室温下用3 MeV He离子进行离子注入时，未辐照区域被Cu网掩模覆盖。由于植入引起的位移损伤，照射区域肿胀。比较了辐照区和未辐照区的起泡行为，发现透明起泡的起始温度与氦注量有关。当注量低到900 ℃以前不会发生起泡时，随后加热到900 ℃也不会发生起泡。在本研究期间，为了阐明起泡行为的材料依赖性，除了先前使用的β-SiC多晶之外，还使用了具有较少晶界影响和较高纯度的α-SiC单晶。热脱附谱分析表明，氦释放没有显着差异之间有和没有晶界的SiC。结果表明，在体积变化和剥离发生显著的温度范围内，基体材料的结晶度一般不影响起泡行为。从表面剥离的温度依赖性和He离子注入的注量依赖性的结果来看，本文提出用570 keV和1.7MeV的He离子注入在β-SiC多晶上制备的微网格阵列<22>具有监测300 ~ 1000 ℃温度的能力。

Performance tests of the temperature history monitor up to 1200C have been carried out for the trial SiC pieces, which have irradiated area and un-irradiated area in the same face. The un-irradiated area was covered by Cu mesh mask when ion implantation was conducted using 3MeV He ion at room temperature. The irradiated area swelled by displacement damage due to implantation. Blistering behavior of the irradiated area was compared to that of the un-irradiated area.It was found that the starting temperature of clear blistering depended on He fluences. When the fluence was as low as blistering never occur until 900C, blistering will not occur subsequent heating up to 900C. In this research period, to clarify material dependence of blistering behavior, single crystal of alpha-SiC was utilized which had less effect of grain-boundary and higher purity in addition to previous used beta-SiC poly-crystals. Thermal desorption spectroscopy analysis of helium release showed no significant differences between with and without grain boundary in the SiC. It was concluded that crystallinity of base material did not generally affect blistering behaviors at the temperature range that volumetric changing and exfoliation occur significantly.From the obtained results of the dependence on temperature and on fluence of He ion implantation of surface exfoliation, it is proposed that micro-mesh arrays prepared on beta-SiC poly-crystals by He ion implantation at room temperature to the fluences of 0.5~1.2x10^<22>ions/m^2 using 570keV and 1.7MeV have capability to monitor the temperature ranging from 300 to 1000C.