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Measurement of hydrogen distribution in absorbing metals by using neutron spin in terferometer

利用干涉仪中子自旋测量吸收金属中的氢分布

基本信息

批准号：
14580541
负责人：
TASAKI Seiji
金额：
$ 1.98万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14580541/
关键词：
slow neutron neutron spin interferometry multiplayer spin splitter hydrogen absorber optical potential

项目摘要

The aim of the present research is to measure hydrogen content and distribution in the hydrogen absorbing materials using neutron spin interferometry and neutron reflectometry.Neutron is a sensitive tool to detect hydrogen because of its large scattering amplitude. And neutron has merit of performing the measurement under hydrogen environment because of its transparency.In the present research we first develop sample holder for the measurements under hydrogen environment. Hydrogen pressure is allowed from 0 Pa to 0.3MPa.The results of neutron reflectometry on measuring hydrogen content in a Pd thin film indicate that hydrogen content H/Pd in a 40nm-thick Pd film is obtained as 0.42 at the surface and as 0.69 at the substrate under 0.02MPa hydrogen pressure. As the hydrogen pressure increases, the H/Pd ratio also increases and the tendency that H/Pd ratio is higher near Si substrate than near surface, is preserved.By neutron refletometry we have also measured LaNiAl and TiCrV alloys, which are frequently used as hydrogen absorbing materials. Hydrogen content in those materials, however, does not change in the hydrogen environment.In addition to the above results, we propose a new method for measuring hydrogen content in a thin film using [ spin splitters, which enables us to apply neutron phase-spin echo technique. In the new method, precision of hydrogen content can be 10 times higer.

本研究的目的是利用中子自旋干涉法和中子反射法测量吸氢材料中氢的含量和分布。中子散射振幅大，是探测氢的灵敏工具。而中子由于其透明性而具有在氢环境下进行测量的优点。在本研究中，我们首次研制了用于氢环境下测量的样品架。氢气压力允许从0 Pa到0.3MPa。用中子反射法测量Pd薄膜中的氢含量，结果表明，在0.02MPa氢气压力下，40nm厚Pd薄膜中的氢含量H/Pd在表面为0.42，在衬底处为0.69。随着氢压力的增大，H/Pd比值也随之增大，且在Si衬底附近的H/Pd比值高于表面附近的H/Pd比值。通过中子反射法，我们还测量了LaNiAl和TiCrV合金，它们经常被用作吸氢材料。然而，这些材料中的氢含量在氢气环境中不会改变。除了上述结果外，我们还提出了一种利用自旋分离器测量薄膜中氢含量的新方法，使我们能够应用中子相自旋回波技术。新方法测定氢含量的精度可提高10倍。