Sensors of Super Five Sense and Brain Mimetic Devices Formed by Organic/Inorganic Hetero Structure

有机/无机异质结构形成的超五传感及类脑器件传感器

• 批准号: 14592002
• 负责人: TABATA Hitoshi
• 金额: $ 2.3万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14592002/
• 关键词: ferroelectrics; ferromagnet; artificial lattice; perovskite; laser MBE; memorv device; functional materials; brain mimetic device; 悩型素子

Superlattices of transition metal oxides have been formed by a laser Molecular Beam Epitaxy (MBE) technique connected with RHEED monitoring system. The superlattices of magnetics have been constructed on SrTiO_3(100), (110) and (111) surfaces. These surface selection enables us tocontrol the threedimensional positioning of atoms and spin. In the case of LaCrO_3/LaFeO_3 superlattices on (111) surface, ferromagnetism has been realized for the first time. In the case of LaMnO3/LaFe03 superlattices, on the other hand, spin frustration is expected competing with ferromagnetism of self-doped LaMnO_33 and anti-ferromagnetism of LaFeO_3 on SrTiO3 (100) surface. Spin glass phase transition (casp shape in magnetization vs. temperature measurements) is observed in the case of LaMnO_3/LaFeO_3 superlattices. It is due to the spin frustration between ferromagnetic couping in LaMnO3 layer and antiferromagnetic coupling in LaFeO_3 layer.

采用激光分子束外延（MBE）技术和RHEED监测系统相结合的方法制备了过渡金属氧化物超晶格。在SrTiO_3（100）、（110）和（111）表面上构筑了磁性超晶格。这些表面选择使我们能够控制原子和自旋的三维定位。在LaCrO_3/LaFeO_3（111）面超晶格中，首次实现了铁磁性。在LaMnO_3/LaFe_（03）超晶格中，自旋阻挫与自掺杂LaMnO_（33）的铁磁性和LaFe_（03）在SrTiO_3（100）表面上的反铁磁性相互竞争。在LaMnO_3/LaFeO_3超晶格中观察到自旋玻璃相变（casp形状的磁化强度与温度的关系）。这是由于LaMnO_3层中的铁磁耦合与LaFeO_3层中的反铁磁耦合之间的自旋阻挫作用造成的。

项目成果

Y.Hotta: "Artificial Control of Order Degree State of B-Site lons in Ba(Zr, Ti)O3 by a Superlattice Technique"Jpn.J.Appl.Phys.. 42. 5908-5912 (2003)

Y.Hotta：“通过超晶格技术人工控制 Ba(Zr, Ti)O3 中 B 位点的有序度状态”Jpn.J.Appl.Phys.. 42. 5908-5912 (2003)

M.Taniguchi: "Humidity Dependence of Electrical Resistivity in Poly(dG)・Poly(dC) DNA Thin Film"Jpn.J.Appl.Phys.. 42. 6629-6630 (2003)

M.Taniguchi：“Poly(dG)・Poly(dC) DNA薄膜中电阻率的湿度依赖性”Jpn.J.Appl.Phys.. 42. 6629-6630 (2003)

H.Tabata: "Electrical Properties of DNA Molecules- Toward the DNA Nano-Electrics-"Proc. of 2nd Int. Conf. on Molecular Electronics and Bioelectronics. 151 (2003)

H.Tabata：“DNA 分子的电学特性 - 迈向 DNA 纳米电学 -”Proc。

田畑 仁(分担執筆): "イオン工学ハンドブック"(株)イオン工学研究所. 1126 (2003)

田畑仁（撰稿人）：《离子工程手册》株式会社离子工程研究所 1126（2003）

M.Joseph: "Preparation of La_<0.9>Sr_<0.1>Ga_<0.85>Mg_<0.15>O_<2.875> thin films by pulsed-laser deposition and conductivity studies"J. Appl. Phys.. 92. 997-1001 (2002)

M.Joseph：“通过脉冲激光沉积和电导率研究制备 La_<0.9>Sr_<0.1>Ga_<0.85>Mg_<0.15>O_<2.875> 薄膜”J。