Sensoron: Fusing Memory and Computing into Spintronics-based Sensors

我们研究了在铁磁隧道结（MTJ）传感器和磁电（ME）存储器的物理系统中进行水库计算的可能性。在主题①中，我们使用一种新的混合VSM/交流阻抗计的方法来测量MTJ传感器的响应。此外，我们还开发了用于表征集体MTJ传感器的动态特性的大规模模拟。在主题②中，我们开发了世界领先质量的Pt/Cr2 O3薄膜器件。此外，我们展示了一个大的异常霍尔效应信号，这为阅读Cr2 O3反铁磁畴的内部存储状态开辟了道路。

We investigated possibilities of Reservoir Computing in the physical systems of: ① ferro-magnetic magnetic tunnel junction (MTJ) sensors, and ② magneto-electric (ME) memories.In topic ①, we developed the measurements for the response of MTJ sensors using a novel method for hybrid VSM/ac susceptometer. Also we developed large-scale simulations for characterizing the dynamics of collective MTJ sensors.In topic ②, we developed world-leading quality of Pt/Cr2O3 thin-film devices. Also, we demonstrated a large anomalous Hall effect signal, which opens the way for reading the internal memory state of Cr2O3 antiferromagnetic domains.