Sensoron: Fusing Memory and Computing into Spintronics-based Sensors

Sensoron：将内存和计算融合到基于自旋电子学的传感器中

• 批准号: 22H01538
• 负责人: アルマダウィ ミフタ
• 金额: $ 11.23万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2022
• 资助国家: 日本
• 起止时间: 2022-04-01 至 2025-03-31
• 项目状态: 未结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-22H01538/
• 关键词: スピントロニクス; センサ; spintronics; sensor; memory; Spintronics; Sensing; Computing

We investigated possibilities of Reservoir Computing in the physical systems of: ① ferro-magnetic magnetic tunnel junction (MTJ) sensors, and ② magneto-electric (ME) memories.In topic ①, we developed the measurements for the response of MTJ sensors using a novel method for hybrid VSM/ac susceptometer. Also we developed large-scale simulations for characterizing the dynamics of collective MTJ sensors.In topic ②, we developed world-leading quality of Pt/Cr2O3 thin-film devices. Also, we demonstrated a large anomalous Hall effect signal, which opens the way for reading the internal memory state of Cr2O3 antiferromagnetic domains.

我们研究了储层计算在以下物理系统中的可能性：①铁磁隧道结（MTJ）传感器和②磁电存储器。在课题①中，我们开发了一种新的混合VSM/ac电纳计测量MTJ传感器响应的方法。我们还开发了大规模的模拟来表征集体MTJ传感器的动力学特性。在课题②中，我们开发了具有世界领先质量的Pt/Cr2O3薄膜器件。此外，我们还展示了一个巨大的异常霍尔效应信号，这为读取Cr2O3反铁磁畴的内部存储状态开辟了道路。