Semi-Automatic Probe System

半自动探针系统

• 批准号: 467419131
• 金额: --
• 依托单位: Rheinisch-Westfälische Technische Hochschule Aachen
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2021
• 资助国家: 德国
• 起止时间: 2020-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/467419131?language=en
• 关键词: Semi; Automatic; Probe; System

Novel devices in the more-Moore and beyond-CMOS domain suffer significant electrical parameter variation. Furthermore, aging effects during lifetime can increase the occurrence and even propagate silent or latent faults. Designing proper strategies for testing ICs after manufacturing as well as in field is considered essential. In order to propose efficient test strategies, detailed characterization of various ICs have to be performed over a large number of Circuits-Under-Test (CUT) to capture relevant statistical data. Such characterization requires a tightly controlled and wide range of operating parameters, such as voltage and temperature. For this effort bare silicon samples shall be automatically characterized in a probe system. Based on device models resulting from the characterization data, manufacturing test strategies shall be proposed and realized in silicon. Such strategies should be suitable of commercial manufacturing as well as in-field testing. The detection capability of test procedures shall be evaluated again in a controlled environment across the full range of parameters. Besides good control and capability of screening a statistical relevant number of CUT, the commercial probe system provides a setup comparable to commercial chip testing, i.e. it allows assessment of the full test procedure.To support this research, a semi-automatic probe system is applied for. As parametric characterization and test is the prime focus, a wide range of forced temperatures is compulsory. For this purpose, dedicated air-drying equipment is required as the local facilities don’t provide pressurized air suitable for low temperatures. Additional important features are the capability to handle typical full-scale 300mm wafers as well as smaller samples. The latter result from postprocessing in local facilities of the RWTH Aachen and the research center Jülich. We will receive such samples from adjoint research groups for our characterization and evaluation efforts. Together with the prober, a device parameter analyzer is necessary for characterization of individual device properties. It also provides precise control of voltages including measurement of injected currents. Furthermore, microprobes for contacting the devices are required.

more-Moore 和超越 CMOS 领域的新型器件会遭受显着的电气参数变化。此外，使用寿命期间的老化效应会增加故障的发生率，甚至传播无声或潜在的故障。设计用于制造后和现场测试 IC 的正确策略被认为是至关重要的。为了提出有效的测试策略，必须对大量被测电路 (CUT) 进行各种 IC 的详细表征，以捕获相关统计数据。这种表征需要严格控制且范围广泛的操作参数，例如电压和温度。为此，裸硅样品应在探针系统中自动表征。根据表征数据产生的器件模型，应提出制造测试策略并在硅中实现。这种策略应该适用于商业制造以及现场测试。测试程序的检测能力应在受控环境中在整个参数范围内再次评估。除了良好的控制和筛选统计相关 CUT 数量的能力之外，商业探针系统还提供了与商业芯片测试相当的设置，即它允许评估完整的测试程序。为了支持这项研究，应用了半自动探针系统。由于参数表征和测试是主要焦点，因此必须采用宽范围的强制温度。为此，需要专用的空气干燥设备，因为当地设施不提供适合低温的压缩空气。其他重要功能包括处理典型全尺寸 300mm 晶圆以及较小样品的能力。后者是在亚琛工业大学和于利希研究中心的当地设施进行后处理的结果。我们将从附属研究小组收到此类样本，用于我们的表征和评估工作。器件参数分析仪与探测器一起对于表征单个器件属性是必需的。它还提供精确的电压控制，包括注入电流的测量。此外，还需要用于接触设备的微探针。