Semi-Automatic Probe System

在摩尔及以上cmos领域的新型器件存在显著的电参数变化。此外，寿命中的老化效应会增加甚至传播沉默或潜在的故障。设计适当的策略来测试集成电路在制造后以及在现场被认为是必不可少的。为了提出有效的测试策略，必须在大量的待测电路（CUT）上对各种ic进行详细的表征，以捕获相关的统计数据。这种特性需要严格控制和广泛的操作参数，如电压和温度。为此，裸硅样品应在探针系统中自动表征。基于表征数据得出的器件模型，提出制造测试策略并在硅上实现。这种策略既适用于商业生产，也适用于现场测试。测试程序的检测能力应在受控环境中，在所有参数范围内再次进行评估。除了良好的控制和筛选统计相关数量的CUT的能力外，商业探针系统还提供了与商业芯片测试相当的设置，即它允许评估整个测试程序。为了支持这一研究，应用了一种半自动探测系统。由于参数表征和测试是主要焦点，大范围的强制温度是必须的。为此，由于当地设施不提供适合低温的加压空气，需要专用的风干设备。其他重要的特点是能够处理典型的全尺寸300mm晶圆以及更小的样品。后者是在亚琛工业大学当地设施和j<s:1>利希研究中心进行后处理的结果。我们将从合作研究小组获得这些样本，用于我们的表征和评估工作。与探针一起，器件参数分析仪是表征单个器件特性所必需的。它还提供精确的电压控制，包括测量注入电流。此外，还需要用于接触器件的微探头。

Novel devices in the more-Moore and beyond-CMOS domain suffer significant electrical parameter variation. Furthermore, aging effects during lifetime can increase the occurrence and even propagate silent or latent faults. Designing proper strategies for testing ICs after manufacturing as well as in field is considered essential. In order to propose efficient test strategies, detailed characterization of various ICs have to be performed over a large number of Circuits-Under-Test (CUT) to capture relevant statistical data. Such characterization requires a tightly controlled and wide range of operating parameters, such as voltage and temperature. For this effort bare silicon samples shall be automatically characterized in a probe system. Based on device models resulting from the characterization data, manufacturing test strategies shall be proposed and realized in silicon. Such strategies should be suitable of commercial manufacturing as well as in-field testing. The detection capability of test procedures shall be evaluated again in a controlled environment across the full range of parameters. Besides good control and capability of screening a statistical relevant number of CUT, the commercial probe system provides a setup comparable to commercial chip testing, i.e. it allows assessment of the full test procedure.To support this research, a semi-automatic probe system is applied for. As parametric characterization and test is the prime focus, a wide range of forced temperatures is compulsory. For this purpose, dedicated air-drying equipment is required as the local facilities don’t provide pressurized air suitable for low temperatures. Additional important features are the capability to handle typical full-scale 300mm wafers as well as smaller samples. The latter result from postprocessing in local facilities of the RWTH Aachen and the research center Jülich. We will receive such samples from adjoint research groups for our characterization and evaluation efforts. Together with the prober, a device parameter analyzer is necessary for characterization of individual device properties. It also provides precise control of voltages including measurement of injected currents. Furthermore, microprobes for contacting the devices are required.