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NOVEL FUNCTIONS OF INTERELEMENT COMPOUNDS

元素间化合物的新功能

基本信息

批准号：
09239102
负责人：
HIYAMA Tamejiro
金额：
$ 55.68万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research on Priority Areas
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 2000
项目状态：
已结题

项目摘要

1) Functions of Group 14 Elements (T.Hiyama, leader, M.Yokoyama)Cage molecules having three Si-Si bonds in parallel were prepared through disilane, tetrasilacyclohexanes. Various substituents were introduced at the bridgehed positions and 3 dimensional s-conjugation was demonstrated spectrometrically and computation. Colloids generated from polysilanes and gold were shown to decompose oxidatively upon UV irradiation and to be promising optical materials.2) Fucntions of Group 16 Elements (A.Ogawa, T.Nagano)For the synthesis of functionality materials containing sulfur, vinylene and phenylene units, rhodium-catalyzed hydrothiolation reaction of acetylenes was invented. Novel compounds containing Se-Se or Se-S bonds were shown to exhibit specific inihibitory activity of NO-synthetase and thus to be promising in control of various physiological disorders.3) Functions of Group 17 Elements (M.Ochiai)Hypervalent iodine reagents having an opticlally active binaphthyl group was invented and shown to be highly effective for asymmetric reactions. In addition, alkynliodinanes were shown to demonstrate potent antifungal acitvity.4) Theoretical Study of Functions of Elements (A.Tachibana)Density Function Theory, as applied to etching of TiN surface with fluorine, crystal growth at GaN surface, absorption of Ga and N atoms at surface, mechanism of interface crystal growth, was shown to be reliable in predicting hard-to-observe phenomena.

1)第14族元素的功能（T.Hiyama, leader， M.Yokoyama）通过二硅烷、四硅环己烷制备了具有三个平行Si-Si键的笼状分子。在桥接位置引入不同的取代基，并通过光谱和计算证明了三维s共轭。由聚硅烷和金生成的胶体在紫外线照射下发生氧化分解，是一种很有前途的光学材料。（A.Ogawa， T.Nagano）为了合成含硫、乙烯和苯基的功能化材料，发明了铑催化乙炔的硫代氢化反应。含有Se-Se或Se-S键的新化合物显示出对no合成酶的特异性抑制活性，因此在控制各种生理障碍方面具有前景。3) 17族元素（M.Ochiai）具有光学活性的联苯基的高价碘试剂的功能被发明，并被证明在不对称反应中是非常有效的。此外，炔碘烷还具有较强的抗真菌活性。4)元素函数的理论研究（A.Tachibana）密度函数理论应用于氟对TiN表面的刻蚀、GaN表面的晶体生长、表面Ga和N原子的吸收、界面晶体生长机理等方面，证明了密度函数理论在预测难以观察到的现象方面是可靠的。