Theoretical Study of Optical Properties in Mott Insulating Cuprates

莫特绝缘铜氧化物光学性能的理论研究

• 批准号: 16540302
• 负责人: TOHYAMA Takami
• 金额: $ 2.05万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16540302/
• 关键词: Mott insulator; Hubbard model; Optical response; Exact diagonalization method; Density matrix renormalization method; Electron-phonon interaction; Two-photon photoemission; ニ光子光電子分光

Charge gap in the Mott insulator originates from strong electron correlation. Therefore, we expect optical responses that are different from those in the band insulator. In this project, we theoretically examine photoexcitaed states and optical properties in insulating copper oxides that are typical Mott insulators by using a half-filled Hubbard model and its effective model. We use the numerically exact diagonalization technique and the dynamical version of density-matrix renormalization method to calculate optical responses of the models.We obtained several new results that are related to issue of 1)excitonic effects on the optical response in the one-dimensional two-band Hubbard model at half filling, 2)theoretical prediction of angle-resolved two-photon photoemission in two-dimensional insulating cuprates in order to clarify unoccupied states above the Fermi level, 3)temperature dependence of spinon and holon excitations seen in the single-particle spectral function of one-dimensional Mott insulators, 4)the symmetry of magnetic exciton in the photoexcited states of two-dimensional Mott insulators, and 5)the effect of electron-phonon interaction on the single-particle spectral function of one-dimensional Mott insulators. We note that The topics from 1) to 4) have been summarized and published in journals like the Physical Review B, and the topic 5) is submitted to a journal.

Mott绝缘体中的电荷间隙源于强电子关联。因此，我们希望得到与带状绝缘体不同的光学响应。在这个项目中，我们利用半填充Hubbard模型及其有效模型，从理论上研究了典型的Mott绝缘体--绝缘铜氧化物中的光激发态和光学性质。我们用数值精确对角化技术和动态密度矩阵重整化方法计算了模型的光学响应。我们得到了几个新的结果，涉及：1)一维双带Hubbard模型中激子效应对光学响应的影响，2)二维绝缘铜氧化物中角分辨双光子光电子发射的理论预测，以澄清费米能级以上的空态，3)一维Mott绝缘体的单粒子谱函数中的自旋和Holon激发的温度依赖关系，4)二维Mott绝缘体的光激发态磁激子的对称性，5)电-声子相互作用对一维Mott绝缘子单粒子谱函数的影响。我们注意到，从1)到4)的主题已经被总结并发表在像《物理评论B》这样的期刊上，而主题5)被提交到期刊上。

项目成果

Physics of Transition Metal Oxides

• DOI: 10.1007/978-3-662-09298-9
• 发表时间: 2004-08
• 作者: S. Maekawa;T. Tohyama;S. Barnes;S. Ishihara;W. Koshibae;G. Khaliullin

Excitonic effect on the optical response in the one-dimensional two-band Hubbard model

一维二维哈伯德模型中光学响应的​​激子效应

• 发表时间: 2005
• 期刊: Phys. Rev. B 71
• 作者: H.Matsueda;T.Tohyama;S.Maekawa
• 通讯作者: S.Maekawa

Symmetry of Photoexcited States and Large-Shift Raman Scattering in Two-Dimensional Mott Insulators

二维莫特绝缘体中光激发态的对称性和大位移拉曼散射

• 发表时间: 2006
• 期刊: Journal of the Physical Society of Japan 75・3
• 作者: M.Okuyama;Y.Ishibashi;T.Tohyama
• 通讯作者: T.Tohyama

Temperature and dimensionality dependences of optical absorption spectra in Mott insulators

莫特绝缘体中光学吸收光谱的温度和尺寸依赖性

• 发表时间: 2004
• 期刊: Physical Review B 69
• 作者: S.Maekawa;T.Tohyama et al.;H.Onodera
• 通讯作者: H.Onodera

Temperature dependence of spinon and holon excitations in one-dimensional Mott Insulators

一维莫特绝缘体中自旋子和完整子激发的温度依赖性

• 发表时间: 2005
• 期刊: Phys. Rev. B 72
• 作者: Nakamichi;N.;Kita;M.;Ito;S.;Yamashino;T.;Mizuno;T.;T.Shima;N.Yoshimoto;栗原達夫;T.Nakamura;M.Kinoshita;Masanori Ono;Y.yamashita;A.Yamada;Masahiro Kawao;Wei Huang;A.Morita;K.Yakushiji;K.Ishii;Y.Utsmi;H.Matsueda
• 通讯作者: H.Matsueda