Development of large STT microwave oscillation magnet with coherent phase-locking

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We have succeeded in obtaining good oscillation power in terms of magnetoresistance ratio with the confined domain wall type magnetoresistive devices, where ~ 1μW(Q=200)and 0. 2μW(Q=600)were confirmed in vortex structure and near anti-parallel state, respectively. These high level oscillations could be explained by Auto-Oscillation model, which means that larger power oscillation with higher Q-value is realized by decreasing threshold current to auto-oscillation mode. In addition, the high sensitivity of 1. 5V/W in STT-FMR measurement was obtained in the confined domain wall MR devices. So, good transmitter/receiver performance of the miniaturized confined domain wall MR devices was verified in this study, leading to realization of wireless chip to chip communication (wireless 3D packaging).