Research on Electronic Structure of Alkali overlayer on Semiconductors and Metals

半导体和金属碱覆盖层电子结构研究

• 批准号: 61550026
• 负责人: KATO Tomohiko
• 金额: $ 0.77万
• 依托单位: Fukuoka Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1986
• 资助国家: 日本
• 起止时间: 1986 至 1987
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-61550026/
• 关键词: work function; surface of semiconductor; alkali overlayer random system on surface; 表面不規則系; クラスターCPA

The aim of this project is to give a general method for calculation of the electronic structure of the adatom-surface system.The process and results are as follows;(1986/4-1987/3)First a formulation for the electronic structure of a surface random system was tried in the central-site-coherent-potential approximation.It was found that the approximation gives a foundamental difficulty.Second the boundary-site-CPA was adopted and rather reasonable results were obrained.(1987/4-1988/3)Above approximation has a limitation that it can be adopted only the system with a nearest neighbor hopping.The present system has more distant hopping.To include this effect,the Cell-CPA is adopted and the numerical results for alkali on Si(100)explain the characteristic feature of the coverage dependence of the eotk function and the electronic structure.

本课题的目的是给出一种计算吸附原子-表面体系电子结构的通用方法，其过程和结果如下：（1986/4-1987/3）首先在中心位相干势近似下尝试了表面无规体系电子结构的一种表述，发现这种近似是一个基本的困难。其次，在中心位相干势近似下尝试了表面无规体系电子结构的边界位相干势近似。并采用CPA法进行了验证，取得了较为合理的结果。(1987/4-1988/3）上述近似只适用于最近邻跃迁的系统，而本系统具有更远的跃迁，为了考虑这种效应，采用Cell-CPA，对Si（100）上碱金属的数值计算结果解释了eotk函数和电子结构与覆盖度的关系。

项目成果

Kato,Tomohiko: "Method for Calculation of Density of States in Randomly Distributed Adatom system. Reports of Electronics Research Laboratory" Fukuoka Institute of Technology. 3. 31-38 (1986)

加藤智彦：“随机分布 Adatom 系统中态密度的计算方法。电子研究实验室报告”福冈工业大学。

T.Kato: Reports of Elec.Res.Lab.Fukuoka Institute of Technlogy. 4. 53-56 (1987)

T.Kato：福冈工业大学 Elec.Res.Lab 的报告。

Kato,Tomohiko: "Theory of Work Function for Surface-Adatom System" Report of Electronics Research Laboratory Fukuoka Institute of Technology. 4. 53-56 (1987)

加藤智彦：福冈工业大学电子研究实验室的“表面吸附原子系统的功函数理论”报告。

T.Kato: Phys.Rev.B.

T.Kato：Phys.Rev.B。

T.KATO;K.OHTOMI;M.NAKAYAMA: Reports the Electronics Reseach Laboratory Fukuoka Institute of Technology. 3. 31-38 (1986)

T.KATO；K.OHTOMI；M.NAKAYAMA：福冈工业大学电子研究实验室的报告。