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Preparation and High Field Properties of Superconducting NbN Tapes

超导NbN带材的制备及其高场性能

基本信息

批准号：
61550200
负责人：
SUZUKI Mitsumasa
金额：
$ 1.09万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1987
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-61550200/
关键词：
Superconducting Magnet B1 compound NbN Thin film 超電導テープ線材

项目摘要

In order to evaluate the high field properties of NbN with B1 structure thin films of NbN have been investigated on their superconducting critical temperature T_C, upper critical field H_iC and field dependent critical current density J_C. NbN has been formed on quartz and sapphire substrates heated up to a temperature between 200 and 700゜C in an argon-nitrogen atmosphere by rf sputtering from a Nb disk target. The thickness of obtained films ranges from 1500 to 6000<Ang>. The T_C of films is strongly influenced by one of deposition parameters, the nitrogen partial pressure P_<N2>. The maximum T_C exceeding 16K is obtained around P_<N2>=4mTorr. Most films deposited at P_<N2> higher than 4mTorr show a single B1 phase and exhibit a strong anisotropy of H_<C2>. Upper critical fields perpendicular to the film plane (H_<C2> ) are larger than those parallel(H_<C2> ). Films show an increasing tendency of H_<C2> with <rho>n(normal state resistivity). High values of H_<C2> are obtained in films with <rho>n above 500<micrn><OMEGA>cm and with a T_iC of 14-15K. NbN films with <rho>n's of 500-1000<micrn><OMEGA>cm show high J_C in fields above 10Tesla. Under the optimum deposition conditions above obtained NbN tapes with metal substrates of Hatelloy-B and SUS304 have been produced. These tapes show H_<C2>'s as high as 25Tesla and exhibit no dependence of J_C on strain up to above 1%.

为了评价具有B1结构的NbN薄膜的高场特性，我们研究了NbN薄膜的超导临界温度T_C、上临界场H_iC和与场有关的临界电流密度J_C。NbN已形成在石英和蓝宝石衬底上加热到200和700 ° C之间的温度在氩氮气氛中通过射频溅射从Nb盘靶。所得薄膜的厚度范围为1500 - 6000<Ang>。薄膜的T_C受氮分压P_的影响很大<N2>。在P_ = 4 mTorr附近获得了超过16 K的最大T_C<N2>。在P_（10）大于4 mTorr时，大多数薄膜<N2>为单一的B_1相，并表现出很强的H_（10）各向异性<C2>。垂直于膜面的上临界场（H_）大于平行于膜面的上临界场<C2>（H_<C2>）。薄膜的<C2>H_2随<rho>n（正常态电阻率）的增大而增大. <C2>在<rho>n大于500 <micrn><OMEGA>cm，T_iC为14- 15 K的薄膜中获得了高的H_2值。在<rho><micrn><OMEGA>10特斯拉以上的电场中，n为500-1000 cm-2的NbN薄膜具有高的J_C。在最佳沉积条件下，制备了以Hatelloy-B和SUS 304为基体的NbN带材。这些带材的H_<C2>s高达25 Tesla，J_C对应变的依赖性不超过1%。