Development of fundamental technique on high resolution electron microscopy and its applications

高分辨电子显微镜基础技术发展及其应用

• 批准号: 01300010
• 负责人: MIHAMA Kazuhiro
• 金额: $ 8万
• 依托单位: Daido Institute of Technology (1991)Nagoya University (1989-1990)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Co-operative Research (A)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01300010/
• 关键词: High voltage electron microscope; in-situ experiment; radiation damage; High resolution electron microscopy; Stereoscopic observation; 〓射電顕; 高分解能; 立体観察; 照射損傷; 反射電顕法; 格子欠陥

This year is the last one for the present project continued three years. High voltage electron microscope is superior in the following characteristics in comparison with conventional electron microscope with the accerelating voltage of around 200 kV : (1) high resolution, (2) hogh penetration power, (3) facility of in-situ experiments, (4) study on the radiation damage, etc. In the last three years, several distinguished results in a field of the instrumentation as well as the application, such as high resolution electron microscopy, radiation damage, in-situ experiments including the creation of new materials by using the high energy electrons as "mini-labo" have been carried out. Furthermore, high voltage electron microscopes were renewed at several universities, Kyoto University, Tohoku University, Tokyo University and Osaka University. Accordingly, we expect the new developement on the high voltage electron microscopy in a wide field of materials science as well as the biological science.In 1991, it was held the meeting at 28th and 29th, November 1991 in Nagoya Kosei-nenkin Kaikan and discussed on the future plan of high voltage electron microscopy at each university and institution besides the presentation of recent research works. These results was summerized in the annual report of 1991.

今年是本项目持续三年的最后一年。高压电子显微镜与加速电压在200 kV左右的常规电子显微镜相比，具有以下上级特点：（1）高分辨率;（2）高穿透力;（3）原位实验设备;（4）辐射损伤研究等。在仪器和应用领域，如高分辨率电子显微镜，辐射损伤，已经进行了原位实验，包括利用高能电子作为“微型实验室”来制造新材料。此外，京都大学、东北大学、东京大学和大坂大学等几所大学更新了高压电子显微镜。1991年11月28日和29日在名古屋高等学院会馆召开了会议，除了介绍最近的研究工作外，还讨论了各大学和研究机构的高压电子显微镜的未来计划。1991年的年度报告概述了这些结果。

项目成果

M. Hibino: "Side-entry type foil lens for correction of spherical aberration of probe-forming lens"

M. Hibino：“用于校正探头形成透镜的球面像差的侧入式箔透镜”

N.Tanaka: "Observation by HVEM of atomic clusters embebded in MgO crystals" Ultramicroscopy. 39. 395-402 (1991)

N.Tanaka：“通过 HVEM 观察嵌入 MgO 晶体中的原子团簇”超显微术。

Y.Ishida: "Structural Feature to Relax Thermal Stress at Mctal/Ceramics Joined Interface" ISII International. 30. 1041-1045 (1990)

Y.Ishida：“缓解 Mctal/陶瓷连接界面热应力的结构特征”ISII International。

Y.Kamiya: "Granularity Noise of Photographic Emulsions-Accuracy of Inteusity Measuremeut by Photographic Plates" J.Eleclron Microsc.39. 351-355 (1990)

Y.Kamiya：“照相乳剂的粒度噪声 - 通过照相板测量 Inteusity 的准确性”J.Eleclron Microsc.39。

N.TANAKA,M.NAGAO,F.YOSHIZAKI and K.MIHAMA: "Structual Study of Nanometer-Sized Iron Erystallites in Single Crystalline Iron-MgO Composite Films" J.Electron Micros.Tech.12. 272-280 (1989)

N.TANAKA、M.NAGAO、F.YOSHIZAKI 和 K.MIHAMA：“单晶铁-MgO 复合薄膜中纳米尺寸铁微晶石的结构研究”J.Electron Micros.Tech.12。