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Simultaneous control of the composition and the stoichiometry for a multinary new solid solution semiconductor

Simultaneous control of the composition and the stoichiometry for a multinary new solid solution semiconductor
多元新型固溶体半导体的成分和化学计量的同时控制
批准号:
63550521
负责人:
MOCHIZUKI Katsumi
金额:
$1.73万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1988
资助国家:
日本
项目状态:
已结题
起止时间:
1988 至 1989

项目摘要

项目成果

MOCHIZUKI Katsumi的其他基金

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中文摘要
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英文摘要
Attention is recently paid to the new materials for tunable laser diode, lasing at about 3.5mum. The laser diodes are expected as the light source for optical communications in the next generation. The quarternary (Pb_<1-x>Cd_x) (S_<1-z>Se_z)_<1+y> are best suited to the above purposes. In this study, a new method for simultaneously controlling the composition x,z and the deviation y from stoichiometry was proposed for the quarternay solid solution. That is, the activity of sulfur(Ps_2), selenium(Pse_2) and CdS_<1-z>Se_z(a_<cds1-z'sez'>) were controlled independently in the heat-treatment process of the solid solution by providing two reservoir chambers in the heat-treatment tube. They are the mixing reservoir of sulfur and selenium and a CdS reservoir. As a result, it was found that the composition x and z of the solid solution is seriously effected by a CdS reservoir(a_<cds1-z'sez'>) and the mole ratio of S and Se in the mixing reservoir, respectively. The deviation y from stoichiometry could also be controlled simultaneously by regulating the sum of chalcogen partial pressures (Ps_2+Pse_2), keeping a_<cds1-z'sez'> and the mole ratio of sulfur and selenium in the mixing reservoir to a specific value corresponding to the target composition x and z. Based on this principle, the diagrams of P(Ps_2+pse_2)-T(heat-treatment temperature)-y(deviation from stoichiometry) was obtained successfully for this quarternary solid solution.
期刊论文(5)
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会议论文
Katsumi Mochizuki: "Solid-uapor equilibrium constant for II-VI ternary solid solutions" J Moterials Letters.
Katsumi Mochizuki:“II-VI 三元固溶体的固体-uapor 平衡常数”J Moterials Letters。
DOI: --
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作者: []
通讯作者:
望月勝美: "3元固溶半導体の組成及びストイキオメトリ-の同時制御" 日本電子材料技術協会会報. 21. 30-37 (1989)
Katsumi Mochizuki:“三元固溶体半导体的成分和化学计量的同时控制”日本电子材料技术协会公告。21. 30-37 (1989)。
DOI: --
发表时间:
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作者: []
通讯作者:
望月 勝美: "3元系固溶半導体の組成及びストイキオメトリ-の同時制御" 日本電子材料技術協会会報. 21. 30-37 (1989)
Katsumi Mochizuki:“三元固溶体半导体的成分和化学计量的同时控制”日本电子材料技术协会通报。21. 30-37 (1989)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Katsumi Mochizuki: "Solid-vapor equilibrium constant for II-VI ternary solid solutions" J.Materials Letters.
Katsumi Mochizuki:“II-VI 三元固溶体的固汽平衡常数”J.Materials Letters。
DOI: --
发表时间:
期刊:
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作者: []
通讯作者:
Single crystal growth under controlled activity of constituent elements of II-VI ternary solid solution semiconductor with Hg as one of the elements
  • 批准号:
    02650525
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
  • 资助金额:
    $1.09万
  • 财政年份:
    1990
  • 负责人:
    MOCHIZUKI Katsumi
  • 依托单位: