课题基金 / 基金详情

Theoretical study on the fundamental electronic process of the surface photochemistry

Theoretical study on the fundamental electronic process of the surface photochemistry
表面光化学基本电子过程的理论研究
批准号:
05403006
负责人:
NAKATSUJI Hiroshi
金额:
$9.86万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (A)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1995

项目摘要

项目成果

NAKATSUJI Hiroshi的其他基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
Surface photochemistry is a newly developing field in surface chemistry and photochemistry. Recently, much effort has been devoted to clarify molecular processes in surface photochemical reactions. Clarifications of the electronic mechanisms of these processes are very important for understanding and designing specific photocatalytic reactions on a solid surface. In this research project, we have studied several subjects concerning not only metal surfaces but also metal complexes by quantum chemical methods. They are divided into four categories ; i.e., 1.Photochemical processes on metal surfaces, 2.Catalytic reactions on metal and metal oxide surfaces, 3.Electronic spectra of metal complexes, and 4.Photochemical reactions of metal complexes. The dipped adcluster model (DAM) is used for modeling the surface-molecule interacting system. The electronic structures in the ground and excited states of the surface-molecule systems are calculated by the symmetry adapted cluster (SAC) and SAC-configuration interaction (SAC-CI) methods, respectively.
期刊论文(53)
专著(0)
科研奖励(0)
会议论文
H. Nakai: "Ab Initio Molecular Orbital Model of Scanning Tunneling Microscopy" J. Chem. Phys.104(5). 2410-2417 (1996)
H. Nakai:“扫描隧道显微镜从头开始分子轨道模型”J. Chem。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
H. Nakatsuji: "New Functionality Materials, Vol. C Synthetic Process and Control of Functionality Materials" Elsevier, 12 (1993)
H. Nakatsuji:“新功能材料,C 卷功能材料的合成过程和控制”Elsevier,12 (1993)
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
H. Nakatsuji: "Dipped Adcluster Model Study for Molecular and Dissociative Chemisorption of O_2 on an Ag Surface" J. Chem. Phys.98(3). 2423-2436 (1993)
H. Nakatsuji:“Ag 表面上 O_2 分子和解离化学吸附的浸渍 Adcluster 模型研究”J. Chem。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
H. Nakatsuji: "Cluster Model Study on GaAs Epitaxial Crystal Growth by As_2 Molecular Beam. II. Mechanism Involving GaAs_2 Intermediate" Surf. Sci.291. 281-290 (1993)
H. Nakatsuji:“As_2 分子束 GaAs 外延晶体生长的簇模型研究。II.涉及 GaAs_2 中间体的机理” Surf。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
42
    Construction and development of the future field of theoretical chemistry
    • 批准号:
      10102005
    • 项目类别:
      Grant-in-Aid for Specially Promoted Research
    • 资助金额:
      $105.86万
    • 财政年份:
      1998
    • 负责人:
      NAKATSUJI Hiroshi
    • 依托单位:
    Theoretical Studies on the electron transser mechanism and the dynamics in the photosynthetic reaction
    • 批准号:
      08454182
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $5.63万
    • 财政年份:
      1996
    • 负责人:
      NAKATSUJI Hiroshi
    • 依托单位:
    Development of the large scale computational program system based on the SAC-CI method
    • 批准号:
      07554026
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $8.9万
    • 财政年份:
      1995
    • 负责人:
      NAKATSUJI Hiroshi
    • 依托单位:
    Many Electron Theory for Molecular System
    • 批准号:
      04243102
    • 项目类别:
      Grant-in-Aid for Scientific Research on Priority Areas
    • 资助金额:
      $41.47万
    • 财政年份:
      1992
    • 负责人:
      NAKATSUJI Hiroshi
    • 依托单位: