Facility for enabling low thermal budget Si/SiGe technologies
Facility for enabling low thermal budget Si/SiGe technologies
批准号:
LE220100095
负责人:
Dr Aron Michael
金额:
$38.67万
依托单位国家:
澳大利亚
项目类别:
Linkage Infrastructure, Equipment and Facilities
财政年份:
2022
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2022-10-10 至 2024-10-09
中文摘要
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英文摘要
This project aims to enhance Australian micro/nano fabrication capability and strengthen research across a range of key technologies by establishing an advanced state-of-the art semiconductor facility that enables deposition of wide range of silicon-based films at low thermal budget. The facility is expected to provide unique capabilities that are not currently available in Australia. The expected outcomes include: (i) development of 3D integration approaches on CMOS Integrated Circuit that will be necessary for the rapidly growing applications in Artificial Intelligence, Internet-of-Things, and Wearables; (ii) thick electrically active silicon-based films for Biomedical, Telecommunication, Photonics, and Micro Electro Mechanical Systems.
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