Facility for enabling low thermal budget Si/SiGe technologies

实现低热预算 Si/SiGe 技术的设施

• 批准号: LE220100095
• 负责人: Dr Aron Michael
• 金额: $ 38.67万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Linkage Infrastructure, Equipment and Facilities
• 财政年份: 2022
• 资助国家: 澳大利亚
• 起止时间: 2022-10-10 至 2024-10-09
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/LE220100095
• 关键词: Facility; enabling; low; thermal; budget

This project aims to enhance Australian micro/nano fabrication capability and strengthen research across a range of key technologies by establishing an advanced state-of-the art semiconductor facility that enables deposition of wide range of silicon-based films at low thermal budget. The facility is expected to provide unique capabilities that are not currently available in Australia. The expected outcomes include: (i) development of 3D integration approaches on CMOS Integrated Circuit that will be necessary for the rapidly growing applications in Artificial Intelligence, Internet-of-Things, and Wearables; (ii) thick electrically active silicon-based films for Biomedical, Telecommunication, Photonics, and Micro Electro Mechanical Systems.

该项目旨在提高澳大利亚微/纳米制造能力，并通过建立先进的最先进的半导体设施来加强对一系列关键技术的研究，该设施能够以低热预算沉积各种硅基薄膜。该设施预计将提供澳大利亚目前没有的独特能力。预期成果包括：（i）开发CMOS集成电路上的3D集成方法，这对于人工智能，物联网和可穿戴设备中快速增长的应用是必要的;（ii）用于生物医学，电信，光子学和微机电系统的厚电活性硅基薄膜。