DEVELOPMENT OF GLANCING ANGLE CEMS AND ANALYSIS OF TIN OXIDES BASED SEMICONDUCTORS.

掠角 CEMS 的开发和氧化锡基半导体的分析。

• 批准号: 07650973
• 负责人: NOMURA Kiyoshi
• 金额: $ 1.41万
• 依托单位: THE UNIVERSITY OF TOKYO
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650973/
• 关键词: ^<119>Sn Mossbauer spectra,; Conversion electron detectors,; Glancing angle CEMS,; Grazing incident CEMS,; ITO transparent and conductive powder and films,; A gas sensor of SnO_2 implanted with Au and Fe ions.

The purpose of our research is to develop a glancing angle conversion electron Mossbauer spectroscopy (GACEMS), which can be applied to the analysis of tin states in the thinner surface layrs of transparent semiconductors and gas sensors materials. Since the range of internal conversion electrons (19.6 keV) emitted after ^<119>Sn Mossbauer effect is large (about 2 mum in solid), the sensitivity of thin surface by a conventional method was small. A back scattered gas flow counter for GACEMS was designed so that the gamma rays of ^<119>Sn could be irradiated on the surface at low glancing angles (<5^0). Since the measuring time was so long, the measuring system was also improved so as to get three or four spectra simultaneously by detecting the conversion electrons with different energy. On the other hand, the chemical states of Sn in Sn-doped In_2O_3 (ITO) powders and films were reestimated by a point charge approximation and Mossbauer spectrometry. It was found that there are 7-and 8-fold coordinated, electrically inactive Sn^<4+> species in the ITO lattice in addition to two electrically active Sn^<4+> species. The estimated carrier densities by Mossbauer spectra were in good agreement with the measured values. Gas sensor properties of SnO_2 films implanted with Au and Fe ions also were studied, and will be characterized by CEMS.Further, the applications of CEMS to various fields have been reviewed.

我们的研究目的是发展一种掠角转换电子穆斯堡尔谱(GACEMS)，它可以用于分析透明半导体和气敏材料较薄表面层中的TiN状态。由于穆斯堡尔效应后发射的内转换电子(19.6keV)范围很大(固体中约为2um)，用常规方法测量薄表面的灵敏度较小。设计了一种用于气质联用的背散射气体流量计数器，使γ射线能够以低掠射角(&lt；5^0)照射到表面。由于测量时间较长，还对测量系统进行了改进，通过对不同能量的转换电子进行探测，可以同时获得三个或四个光谱。另一方面，用点电荷近似和穆斯堡尔谱重新估算了掺锡In_2O_3(ITO)粉末和薄膜中锡的化学状态。结果表明，在ITO晶格中，除了两个电活性的Sn^&lt；4+&gt；物种外，还有7和8配位的电非活性Sn^&lt；4+&gt；物种。用穆斯堡尔谱估算的载流子密度与实测值吻合较好。研究了Au和Fe离子注入SnO2薄膜的气敏特性，并用CEMS对其进行了表征，展望了CEMS在各个领域的应用。

项目成果

K.Nomura et al.: "Magnetic structure of Fe-Si-Al films implanted with Al and N ions." Journal of Radioanalytical and Nuclear Chemistry,Articles. 190. 299-313 (1995)

K.Nomura 等人：“注入 Al 和 N 离子的 Fe-Si-Al 薄膜的磁性结构。”

K.Nomura et al.,: "CO_2 Absorption Properties and characterization of perovskite oxides,(Ba,Ca)(Co,Fe)O_<3-d>" Applied Catalysis A;General. 137. 25-36 (1996)

K.Nomura等人，：“钙钛矿氧化物的CO_2吸收特性和表征，(Ba,Ca)(Co,Fe)O_<3-d>”应用催化A；综述。

K.Nomura et al.,: "Au,Feイオン注入したSnO_2膜のガスセンサー特性" Japan Association of Chemical Sensors,The Electrochemical Society of Japan.11,Supp.A. 1-4 (1995)

K.Nomura等，“注入Au和Fe离子的SnO_2膜的气体传感器特性”日本化学传感器协会，日本电化学会.11，Supp.A(1995)

K.Nomura et al.,: "CO_2 Absorption Properties and characterization of Perovskite oxides,(Ba,Ca)(Co,Fe)O_<3-d>." Applied Catalysis. A101(in press). (1995)

K.Nomura 等人：“钙钛矿氧化物 (Ba,Ca)(Co,Fe)O_<3-d> 的 CO_2 吸收性能和表征。”

K.Nomura et al.: "CEMS study of magnetic structure of Fe-Si-Al film implanted with Al and N ions." Conference Proceeding Vol.50 <ICAME-95> I.Ortalli (Ed.).50. 703-706 (1996)

K.Nomura 等人：“注入 Al 和 N 离子的 Fe-Si-Al 薄膜磁结构的 CEMS 研究。”