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Spin resolved resonant inverse photoemission

自旋分辨谐振逆光电发射

基本信息

批准号：
09640388
负责人：
FUJISAWA Masami
金额：
$ 1.98万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09640388/
关键词：
Spin Resolved Inverse Photemission electrongun spectroscopy

项目摘要

In this year, we made spin resolved electron g^<uc>. The electron source of the g^<un> is made by Cs coated GaAsP, where Cs decreases the work function. This is NEA cathod type.The experiments were carried Out by the SXES spectrometer that was made by us. The RIPES measurement near Ce 4d absorption edge reveals the remarkable contrastive electronic structure at the bulk and surface state of CePd_7. The RIPES at Ce 4d * 4f edge is found to be a powerful method to investigate the surface 4f state. The bulk is alpha-like and the surface is gamma-like. The difference of the ground state configuration at the bulk and surface reflects the separate resonances. The extremely high Kondo temperature (kT_K-O.95 eV) of bulk expresses the very strong hybridization between the 4f and ligand electrons. Our results are consistent with the calculated results. Due to the large Ce-Ce spacing, the calculation within the framework of IAM seems to give a good agreement. The resonant enhancement of 4f-cross section makes it possible to distinguish between the specific contributions in the spectra near Fermi level. It is pointed out that the RIPES measurement around Ce 4d edge has high sensitivity to the surface. Also, the energy band scheme (LMTO) gives a qualitatively good agreement with the off resonance spectra, which are mainly of Ce 5d origin. However, band calculation underestimates the energy position of the Ce 5d component above the Fermi level by about 1.4 eV.

在这一年，我们做了自旋分辨电子g^<uc>。电子源<un>由Cs涂覆的GaAsP制成，其中Cs降低功函数。这是NEA阴极型，实验是在自行研制的SXES谱仪上进行的。在Ce 4d吸收边附近的RIPES测量揭示了CePd_7的体相和表面态电子结构的显著对比。发现Ce 4d * 4f边缘的RIPES是研究表面4f态的一种强有力的方法。主体是α-样的，表面是γ-样的。在体和表面处的基态构型的差异反映了分离的共振。体相的Kondo温度（kT_K ~ 0.95 eV）表明4f与配体电子之间存在很强的杂化作用。我们的结果与计算结果是一致的。由于大的Ce-Ce间距，在IAM框架内的计算似乎给出了很好的协议。4f截面的共振增强使得在费米能级附近的光谱中区分特定的贡献成为可能。指出Ce 4d边缘附近的RIPES测量对表面有很高的灵敏度。此外，能带计划（LMTO）给出了一个定性良好的协议与非共振光谱，这主要是Ce 5d起源。然而，能带计算低估了Ce 5d组分在费米能级以上的能量位置约1.4 eV。