Superconductor/Insulator transition in two dimensional amorphous W ultra-thin film
Superconductor/Insulator transition in two dimensional amorphous W ultra-thin film
批准号:
08640442
负责人:
KUWASAWA Yoshinori
金额:
$1.41万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997
中文摘要
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英文摘要
Amorphous W thin film (a-W) keeps a superconductivity down to the thickness of 1.2nm. Then this material is useful on the research of superconductivity of two dimensional disorder systems. In this research, two kinds of samples, Si/a-W/Si and a-W/Si multilayrs, were prepared and their superconducting characteristics were investigated. The following results were produced.1.Observation of disorder induced Superconductor-Insulator (S/I) transition in Si/a-W/Si stuctureWe measured the critical temperatures for various a-W film thickness with d_W=1-10nm. In d_W*1nm, superconductivity disappears and T-dependence of sheet resistance R_<sq> follows to the exp (T^<-1/3>) 's law. In the dependence of critical temperature T_<co> upon normal R_<sq> for d_W*1.2nm, the superconductivity disappears when R_<sq> equals to the quantum sheet resistance h/4e^2. This system indicates a typical disorder induced S/I transition.2.Kostelize-Thoughless (KT) transition in a-W/Si multilayrsKT-transition is the second phase transition where the vortex-antivortex pairs are induced near Tc by the thermal fluctuation of phase in order parameter. Due to the detail measurements of I-V characteristics at zero field, (1) the relation of KT transition and superconducting coupling between a-W layrs was investigated by the change of thickness of Si layr and (2) the vortex loop excitation at KT-transition was observed by controlling the number of bilayrs.3.Observation of magnetic induced S-I transition in Si/a-W/Si structure.In the samples with W-thickness of 1.2-3nm, the field induced S-I transition was observed by the temperature dependence of sheet resistance. Whether such a transition is vortex to Bose glass one caused by the fluctuation of superconducting phase or not was studied by analyzing the data with the Fisher's scaling law.
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Y.Kuwasawa etal: "Superconductor/Insulator transition of ultra thin amorphous W-film in Si/a-W/Si structure" Localization'96',Institute of Physics PollishAcademy. (Proceeding). 189-190 (1996)
Y.Kuwasawa 等人:“Si/a-W/Si 结构中超薄非晶 W 膜的超导/绝缘体转变”本地化96,PollishAcademy 物理研究所。
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Y.Kuwasawa et al.: "Superconductor/Insulator transition of ultra thin amorphous W-film in Si/a-W/Si sandwich structure" "Localization 96" edited by Institute of Physics Polish Academy. (Proceeding). 189-190 (1996)
Y.Kuwasawa等人:“Si/a-W/Si夹层结构中超薄非晶W膜的超导体/绝缘体转变”“Localization 96”,波兰科学院物理研究所编辑。
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Y.Matsuo et.al.: "Current-voltage characteristics and layer coupling in amorphous W/Si Multilayers" Physica C. (in press). (1997)
Y.Matsuo 等人:“非晶 W/Si 多层中的电流-电压特性和层耦合”Physica C.(出版中)。
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Y.Matsuo et al.: "Current/voltage characteristics and layr coupling in amorphous W/Si multilayrs" Physica C. Vol.277. 138-144 (1997)
Y.Matsuo 等人:“非晶 W/Si 多层中的电流/电压特性和层耦合”Physica C. Vol.277。
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Y.Matsuo et al.: "Finite-size effect on vortex loop excitation in amorphous W/Si multilayrs" Physica C. (in print). (1998)
Y.Matsuo 等人:“非晶 W/Si 多层中涡流环激励的有限尺寸效应”Physica C.(印刷中)。
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共 13 条
VORTEX STATE OF SUPERCONDUCTING Nb/Nb_<1-X>Zr_X MULTILAYERS
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批准号:05640404
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.41万
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财政年份:1993
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负责人:KUWASAWA Yoshinori
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依托单位:
海外基金