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De Haas-van Alphen Effect of Heavy Electron Systems with non-Fermi Liquid behavior

De Haas-van Alphen Effect of Heavy Electron Systems with non-Fermi Liquid behavior
具有非费米液体行为的重电子系统的德哈斯-范阿尔芬效应
批准号:
11640356
负责人:
MAEZAWA Kunihiko
金额:
$1.92万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000

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项目成果

MAEZAWA Kunihiko的其他基金

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中文摘要
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英文摘要
The Fermi surface study of CeNi2Ge2, which is a heavy electron system showing non-Fermi liquid behavior, by means of de Haas-van Alphen (dHvA) effect was intended. The method of crystal growth with very low residual resistivity was studied. Further, we perfoemed to measure the dHvA effect of the reference material LaNi2Ge2.RESULTS : A good quality single crystals could be obtained in the following conditions : 1) Pre-purification of the raw material of Ce using electro-transport method. 2) Growth along the [001] direction using the seed. For the best specimen, which was only obtained at the position up to 20 mm from the neck point of the single crystal rod, the residual resistivity was 1.5 μΩ cm and the half width of the X-ray rocking curve, (004) reflection, was 0.2 degrees. The dHvA effect of CeNi2Ge2 could not be observed, probably due to the heavy electron masses. We will try to observe at a temperatures lower than 3He temperature in a future. On the other hand, we suceeded to measure the dHvA effect of LaNi2Ge2, and compared to the Fermi surfaces calculated, obtaining very good agreement between the experiment and the band calculaion.We also studied the magnetic correlation and the superconductivity, using the inelastic nutron scattering and the electrical resistivity. It was found the weak antiferromagnetic correlation exists at temperatures lower than 30 K, and the superconductivity also was found at ambient pressure and at pressures from 2 GPa to 5 GPa at temperatures lower than 300 mK.
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会议论文
D.Braithwaite et.al.: "Superconductive, upper critical field and normal state resistivity in CeNi2Ge2 under pressure"J.Phys.: Condensed Matter. 12. 1339-1349 (2000)
D.Braithwaite 等人:“压力下 CeNi2Ge2 的超导性、上临界场和常态电阻率”J.Phys.:凝聚态物质。
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K.Maezawa et.al.: "de Haas-van Alphen effect in LaNi2Ge2"Physica B. 259-261. 1091-1093 (1999)
K.Maezawa 等人:“LaNi2Ge2 中的 de Haas-van Alphen 效应”Physica B. 259-261。
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K.Maezawa et.al.: "de Haas-van Alphen effect in LaNi_2Ge_2"Physica B. 259-261. 1091-1093 (1999)
K.Maezawa 等人:“LaNi_2Ge_2 中的 de Haas-van Alphen 效应”Physica B. 259-261。
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6
    The Study of Fermi Surfaces of the Intermetallic Compounds Between Rare-Earths and Nickel