The Surface Structure of Ferroelectric Crystal like a Ammonium Sulfate Type crystals.
The Surface Structure of Ferroelectric Crystal like a Ammonium Sulfate Type crystals.
批准号:
11650689
负责人:
MATSUKI Kiyoshi
金额:
$2.24万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2001
中文摘要
Potassium tellurite K_2TeO_3was found a new ferroeclectics by the measurements of dielectric constants.It was found that a new ferroelectric potassium tellurite undergoes successive phase transitions.The domain structure of the single crystal of ferroelectric potassium tellurite under the polarizing microscope,was observed at room temperature。The irregular stripe pattern was observed in(Ab)-plane.The a-face is covered with the scale-like patterns.Potassium tellurite shows successive phase transitions.This was a similar behavior with ammomium fluoroberyllate,(NH_4)_2BeF_4,and potassium selenate,K_2SeO_4.The transiton temperature of potassium tellurite is relatively higher than those crystals.Then we investigated to clearfy the difference in ferroelectricity between these substances by the microscopic observation under wide temperature range.The domain movement on the surface in ammonium sulfate,(NH_4)_2SO_4,single crystal is detected with the movement of the baundary of the retardation。There is no change for the retardation in immcomensurate phase in(NH_4)_2BeF_4and K_2SeO_4crystals.The single crystal which were grown by the slow evaporation from an aqueous solutioon of K_2TeO_3was found a K_2Te_2O_5·3H_2O by X-ray single crystal diffraction。The modification on the surface in potassium tellurite was caused by the efflorescence.
英文摘要
Potassium tellurite K_2TeO_3 was found a new ferroeclectics by the measurements of dielectric constants. It was found that a new ferroelectric potassium tellurite undergoes successive phase transitions. The domain structure of the single crystal of ferroelectric potassium tellurite under the polarizing microscope, was observed at room temperature. The irregular stripe pattern was observed in (ab)-plane. The a-face is covered with the scale-like patterns. Potassium tellurite shows successive phase transitions. This was a similar behavior with ammomium fluoroberyllate, (NH_4)_2BeF_4, and potassium selenate, K_2SeO_4. The transiton temperature of potassium tellurite is relatively higher than those crystals. Then we investigated to clearfy the difference in ferroelectricity between these substances by the microscopic observation under wide temperature range.The domain movement on the surface in ammonium sulfate,(NH_4)_2SO_4, single crystal is detected with the movement of the baundary of the retardation. There is no change for the retardation in immcomensurate phase in (NH_4)_2BeF_4 and K_2SeO_4 crystals. The single crystal which were grown by the slow evaporation from an aqueous solutioon of K_2TeO_3 was found a K_2Te_2O_5・ 3H_2O by X-ray single crystal diffraction. The modification on the surface in potassium tellurite was caused by the efflorescence.
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H. Sato, K. Kudoh, K. Yoshio, T. Yamazaki, K. Matsuki, I. Shimono, N. Sakagami, A. Onodera: "Effect Of Cu-Doping On II-VI Semiconducting ZnO"Ferroelectric. Vol. 264. 139-444 (2001)
H. Sato、K. Kudoh、K. Yoshio、T. Yamazaki、K. Matsuki、I. Shimono、N. Sakagami、A. Onodera:“Cu 掺杂对 II-VI 半导体 ZnO 的影响”铁电体。
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K. Matsuki, J, Kimura, N. Sakagami, H. Sato, A. Onodera: "Electron Spin Resonance of Fe^<3+> Ions in ZnO Single Crystal"Ferroelectric. (in press). (2002)
K. Matsuki, J, Kimura, N. Sakagami, H. Sato, A. Onodera:“ZnO 单晶中 Fe^<3> 离子的电子自旋共振”铁电体。
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S. Hagino, K. Yoshio, T, Yamazaki, H. Satoh, K. Matsuki, A. Onodera: "Electric Ferroelectricity in ZnO"Ferroelectric. Vol. 264. 235-240 (2001)
S. Hagino、K. Yoshio、T、Yamazaki、H. Satoh、K. Matsuki、A. Onodera:“ZnO 中的铁电性”铁电体。
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H. Sato et. al: "Effect of Cu-Doping II-VI Semiconducting ZnO"Ferroelectrics. 264. 139-144 (2001)
H.佐藤等。
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H.Sato: "Effect of Cu-Doping On II-VI Semiconducting ZnO"Ferroelectric. 264. 139-144 (2001)
H.Sato:“Cu 掺杂对 II-VI 族半导体 ZnO”铁电体的影响。
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共 13 条
Development of Vector ESR Spectrometer with Multiple Modulation Protocol
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批准号:02555001
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$4.48万
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财政年份:1990
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负责人:MATSUKI Kiyoshi
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依托单位:
海外基金