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Design of new type of ion conducting intercalation compound with modification of van der Waals gaps

范德华间隙修饰新型离子导电插层化合物的设计

基本信息

批准号：
14550668
负责人：
MATSUDA Motohide
金额：
$ 2.3万
依托单位：
OKAYAMA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550668/
关键词：
intercalation compound soft-chemistry ion conductor van der Waals space synthesis new compound layered structure lattice space

项目摘要

In our work with aim of artificially designing new type of cation conductor, intercalation of various guest elements into van der Waals spaces of layer structured compounds has been investigated. The present work has studied doubly intercalation of iodine as bridging anions and silver as conducting cations into Sr-doped Bi_2O_3 (SBO) with van der Waals spaces, and characterized resultant intercalation compounds. Until now, the following results have been obtained in our investigations.・ The doubly intercalation of iodine and silver into SBO can take place in the following stepwise process the iodine elements are first intercalated into the SBO around 440K and then the silver elements are intercalated in the I-intercalated SBO around 570K.・ The doubly intercalation brings about a large expansion around 1 nm in the c axis of host structure. It has been suggested from calculations for one-dimensional electron distribution that the iodine and silver intercalated are located within the van der Waals spaces of host structure.・ The amounts of guest elements intercalated are controllable with the amount of silver added to starting mixture.・ The Ag intercalation makes high conductivities for the new intercalation compounds thus synthesized. The above results indicate that the enhanced electrical properties are due to migration of Ag intercalated.

在人工设计新型阳离子导体的工作中，我们研究了各种客体元素嵌入到层状结构化合物的范德华空间中。本文研究了在范德华空间中，碘作为桥联阴离子，银作为导电性阳离子双重插层到锶掺杂的Bi2O_3(SBO)中，并对所得插层化合物进行了表征。到目前为止，我们的调查取得了以下结果。·碘和银在SBO中的二次插层可以分步骤进行。在440K左右，碘元素首先插入到SBO中，然后在570K左右，银元素插入到I插层的SBO中。·二次插层使基质结构的c轴在1 nm左右发生较大的膨胀。对一维电子分布的计算表明，插层的碘和银位于主体结构的范德华空间内。·插层客体元素的量可以通过加入到起始混合物中的银量来控制。·银的插层使所合成的新型插层化合物具有较高的电导率。上述结果表明，银的电学性能的提高是由于银的迁移所致。