Sintering and Crystal Orientation of Nano-particle with Stacking Disordered Structure
Sintering and Crystal Orientation of Nano-particle with Stacking Disordered Structure
批准号:
19350104
负责人:
OHYANAGI Manshi
金额:
$12.81万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2007
资助国家:
日本
项目状态:
已结题
起止时间:
2007 至 2009
中文摘要
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英文摘要
The research was to investigate (1) the correlation between the structural ordering, the crystal orientation and the consolidation of nano-particle with stacking disordered (SD) structure, and (2) the conditions and factors which influence to the correlation. The effect of the sintering parameter and additives (e.g.boron for carbon, boron oxide for boron nitride) on the structural ordering, the crystal orientation and the consolidation was observed. We succeed to produce fully sintered compact with remaining SD structure or intense crystal orientation and proved that the compacts exhibited remarkable mechanical and electrical characters.
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メカニカルアロイングによる炭化ケイ素の合成とその焼結
机械合金化碳化硅的合成及其烧结
DOI:
--
发表时间:
2009
期刊:
セラミックス 44巻
影响因子:
--
作者:
[大柳満之, 他1名]
通讯作者:
他1名
DOI:
10.1007/s10853-008-2782-z
发表时间:
2008-07
期刊:
Journal of Materials Science
影响因子:
4.5
作者:
[Y. Kodera;N. Toyofuku;Hiroyasu Yamasaki;M. Ohyanagi;Z. Munir]
通讯作者:
Y. Kodera;N. Toyofuku;Hiroyasu Yamasaki;M. Ohyanagi;Z. Munir
Turbostratic Boron Nitride Collsolidated by MG-SPS
MG-SPS 固结的湍层氮化硼
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[M.Ohyanagi, 他4名]
通讯作者:
他4名
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[M. Ohyanagi, 他3名]
通讯作者:
他3名
Preparation of SiC Composite with Hexagonal and Turbostratic BN by MA-SPS Method
MA-SPS法制备六方晶系和乱层BN SiC复合材料
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[M. Ohyanagi, 他5名]
通讯作者:
他5名
共 10 条
FABRICATION OF NOVEL INORGANIC MATERIALS AND EVALUATION OF THE HIGHLY RAPID PROCESSING BY HIGHLY EXOTHERMIC AND QUICK REACTION OF COMBUSTION SYNTHESIS
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批准号:09450249
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.22万
-
财政年份:1997
-
负责人:OHYANAGI Manshi
-
依托单位:
RAPID SINTERING OF CERAMIC COMPOSITES BY HIGH TEMPERATURE EXOTHERMIC REACTION/DYNAMIC COMPACTION PROCESS
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批准号:06650970
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.41万
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财政年份:1994
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负责人:OHYANAGI Manshi
-
依托单位: