IMPROVEMENT OF THERMOELECTRIC PROPRTIES OF TiNiSn SYSTEM WITH HALF-HEUSLER TYPE STRUCTURE

点击翻译按钮获取中文摘要

Figure of merit and power factor in half-Heusler type alloys of the TiNiSn system changed complicatedly with kind and quantity of dopants, annealing temperature and period, phase structures and lattice defects, and atom occupations on each sub-lattice. Figure of merit and power factor were improved by addition of Zr, Hf on Ti sub-lattice, Cu on Ni sub-lattice, and Sb on Sn sub-lattice, by exceeding a stoichiometric composition of Ti, and by carrying out heat-treatment for 50 h at 1000-1100 K.