Development of a Triple-Scale Analysis for Implantable Piezoelectric Thin Films Actuators
Development of a Triple-Scale Analysis for Implantable Piezoelectric Thin Films Actuators
批准号:
19760080
负责人:
UETSUJI Yasutomo
金额:
$2.4万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2007
资助国家:
日本
项目状态:
已结题
起止时间:
2007 至 2009
中文摘要
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英文摘要
In order to find new implantable piezoelectric materials, perovskite-type oxides have been examined by employing first-principles calculation. Computations indicated that MgSiO_3 has superiority on the phase transition from cubic structure to tetragonal one. Additionally, tetragonal MgSiO_3 has a large spontaneous polarization and it can exhibit the largest piezoelectric response. Next, a computational scheme of first-principles aided triple-scale analysis based on a process crystallography was developed to design implantable piezoelectric thin films fabricated on substrate. The developed triple-scale analysis was applied to a new implantable piezoelectric MgSiO_3 thin film. As a result, the computation indicated that Cr(110) substrate is most suitable for stable crystal growth of MgSiO_3 orientated to [101] direction and it outputs the high piezoelectric stress constants.
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第一原理計算による新規生体適合圧電材料の構造・機能評価(第二報ペロブスカイト型非酸化物)
使用第一原理计算对新型生物相容性压电材料进行结构和功能评估(关于钙钛矿型非氧化物的第二份报告)
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[福田康人, 槌谷和義, 上辻靖智, 畑徹弥, 福田康人, 木村周介, 平盛智己, 谷口祐樹, 上辻靖智, 上辻靖智, 上辻靖智]
通讯作者:
上辻靖智
新規生体適合MgSiO3圧電薄膜の第一原理トリプルスケール解析
新型生物相容性 MgSiO3 压电薄膜的第一性原理三尺度分析
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[福田康人, 槌谷和義, 上辻靖智, Yasutomo UETSUJI, Yasutomo UETSUJI, Hiroyuki KURAMAE, Yasutomo UETSUJI, Yasutomo UETSUJI, 上辻靖智]
通讯作者:
上辻靖智
A proposal for optimization of crystal orientations in piezoelectric ceramics by multiscale finite element analysis through crystallographic homogenization method
通过晶体均匀化方法进行多尺度有限元分析优化压电陶瓷晶体取向的建议
DOI:
--
发表时间:
2007
期刊:
Trans.Jpn.Soc.Mech.Eng. 72-721(A)
影响因子:
--
作者:
[Uetsuji, Y., Nakamachi, E., et. al.]
通讯作者:
et. al.
Crystal Growth Prediction by First-Principles Calculations for Epitaxial Piezoelectric Thin Films
通过第一性原理计算预测外延压电薄膜的晶体生长
DOI:
--
发表时间:
2009
期刊:
Journal of Computational Science and Technology 3
影响因子:
--
作者:
[A. Yamanaka, T. Takaki, Y. Tomita, Hwishim HWANG, Hwishim HWANG]
通讯作者:
Hwishim HWANG
First-Principles Study on Crystal Structure and Piezoelectricity of Perovskite-Type Silicon Oxides
钙钛矿型硅氧化物晶体结构与压电性的第一性原理研究
DOI:
--
发表时间:
2008
期刊:
Journal of Solid Mechanics and Materials Engineering 2
影响因子:
--
作者:
[久國陽介, 高木知弘, 冨田佳宏, Yasutomo UETSUJI]
通讯作者:
Yasutomo UETSUJI
共 49 条
First-Principles Study on Crystal Structure Design and Fabrication of Implantable Lead-Free Piezoelectric Materials
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批准号:22760087
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项目类别:Grant-in-Aid for Young Scientists (B)
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资助金额:$2.41万
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财政年份:2010
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负责人:UETSUJI Yasutomo
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依托单位: