Theoretical analyses on nanoscale local electric property measurements using scanning tunneling microscopes

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We have developed and improved methods and computational codes for theoretical analyses on nanoscale local electric property measurements using scanning probe microscopes. Using the codes, we have achieved, for example, clarification of relation between local tunneling barrier height measurements and band bending induces by a voltage applied to probe, clarification of origins of the oscillation with the gate voltage and appearance of negative values in four-probe resistance measurements, and derivation of formula to determine voltages in the voltage probes that satisfy the zero-current condition in the four-probe resistance measurements