Analysis of potential barriers for ion transport in ionic conductors

从单晶X-射线衍射强度的跳跃过程中的固体中的快速离子输运的势垒估计。一种新提出的方法被成功地应用到一维（1d）离子导体含有钾和Rb离子作为移动的物种。对一维离子导体的电导率与结构参数之间的关系进行了详细讨论，结果表明，该方法对一维离子导体的电导率与结构参数之间的关系也是有效的，且超晶格的尺寸是子晶格的沿着方向的3倍。

Potential barriers of the hopping process for fast ion transport in solids were estimated from single-crystal X-ray diffraction intensities. A newly-presented method was successfully applied to one-dimensional (1d) ionic conductors containing K and Rb ions as mobile species. The validity of the method was also confirmed for a 1d ionic conductor with a superlattice of 3 times the sublattice along the conduction path. It has consequently become easier to discuss relations between structural parameters and ion conductivities in detail.