Preparation of Metal-insulator Composite Films by The Metal-insulator Co-electroless Deposition Method

采用一种新的化学方法--“金属-氧化物共化学沉积法“制备了Co-Ce-O薄膜。e.从反应溶液中同时沉积金属和氧化物。采用电位-pH图进行热力学模拟，确定了沉积条件。Co-Ce-O沉积膜中的Co含量经历从0到100体积%的变化，这取决于反应溶液中CoSO 4的浓度。约10at.% B，包括在Co-Ce-O薄膜中，因此意味着Co以非晶相存在。

Co-Ce-O films were synthesized by a newly-developed chemical method called the"metal-oxide co-electroless deposition method,"i. e. the simultaneous deposition of metal and oxide from a reaction solution. The deposition conditions were determined by thermodynamic simulation using potential-pH diagram. The Co content in the Co-Ce-O deposited films was subject to change from 0 to 100 vol.%, depending on the concentration of the CoSO4 in the reaction solution. About 10 at.% B, including in the Co-Ce-O films, therefore meant Co existed as an amorphous phase.