Development of circuit technologies of large-scale and multi-layer memory

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Magnetic random access memory is required to decrease the cost by decreasing the chip area and it is needed to develop the basic technology to attain the stacking layer circuit technologies. It is clarified to make the sensitivity two fold by adopting the optimization of the weighting factor of MTJ resistance, and also make the sensitivity the maximum value adopting the MR-ratio 2-3 value. Solar battery is integrated in order to decrease power dissipation and it is proved the new method to generate high voltage is useful for the high performance of the CMOS circuits.