Development of circuit technologies of large-scale and multi-layer memory

磁性随机存取存储器需要通过减小芯片面积来降低成本，并且需要开发基础技术以实现堆叠层电路技术。阐明了通过采用MTJ电阻的加权因子的优化来使灵敏度提高一倍，并且还使灵敏度在MR比2-3的值处达到最大值。为了降低功耗，将太阳能电池进行了集成，并证明了这种产生高电压的新方法对提高CMOS电路的性能是有益的。

Magnetic random access memory is required to decrease the cost by decreasing the chip area and it is needed to develop the basic technology to attain the stacking layer circuit technologies. It is clarified to make the sensitivity two fold by adopting the optimization of the weighting factor of MTJ resistance, and also make the sensitivity the maximum value adopting the MR-ratio 2-3 value. Solar battery is integrated in order to decrease power dissipation and it is proved the new method to generate high voltage is useful for the high performance of the CMOS circuits.