Development of a short channel organic FET having high switching speed

本研究旨在通过对器件结构的改进，制作出一种具有从MHz到GHz快速开关速度的短沟道有源场效应晶体管(FET)。我们用我们原来的扁平金属电极制作了底接触型Ruburene FET。最大开关速度达到了6 mhz，这是由于通过单独的栅极结构实现的寄生电容的减小以及降低接触电阻的努力。然而，由于我们的器件制造技术不足，达到的程度仍然低于最初的预期值100 MHz。我们试图找到一种碳纳米管场效应管器件的湿法制备技术，它将具有与有机器件类似的优势。通过传统的湿法工艺，我们成功地在平板电极上制备了具有双极特性的底接触碳纳米管场效应晶体管。

This study aimed to fabricate a short channel organic field effect transistor (FET), which will have high switching speed from MHz to GHz by improving the device structure. We fabricated bottom contact type ruburene FET using our original flattened metal electrodes. Maximum switching speed up to 6MHz has attained owing to decreased parasitic capacitance realized by an individual gate structure and effort to decrease the contact resistance. However, the attainment was still lower than initial desired value, 100MHz, because of our insufficient device fabrication technique. We have tried to find a wet process fabricate technique of carbon nanotube FET device, which will have similar advantage of organic devices. We successfully fabricated a bottom contact carbone nanotube FET on our flat electrodes showing ambipolar characteristics by a conventional wet process.