Electrical Resistivity Control of Non-oxide Ceramics by Grain Boundary Phases

通过晶界相控制非氧化物陶瓷的电阻率

• 批准号: 21360339
• 负责人: KUSUNOSE Takafumi
• 金额: $ 11.9万
• 依托单位: Kagawa University (2010-2011)Osaka University (2009)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21360339/
• 关键词: 高温材料; 電気伝導; 熱伝導; セラミックス; 構造・機能材料; 無機工業材料; 無機工業化学

Although AlN ceramics is intrinsically an insulator, the electrically conductive AlN ceramics has been expected as machine parts in semiconductor manufacturing equipments. Our research group has reported it is possible to render AlN ceramics electrically conductive without losing their intrinsic high thermal conductivity by precipitating a rare-earth oxycarbide grain boundary phase of below 2 vol.%. However, the fracture strength of conductive AlN remarkably decreased because of grain growth of AlN by high temperature heat treatment for production of rare-earth oxycarbide grain boundary phase. In order to inhibit considerable grain growth by decreasing sintering temperature, the compositions of sintering additives were discussed. The improvement of fracture strength of electrically conductive AlN was attained by addition of Y_2O_3-CeO_2 composite additive, which is possible to inhibit grain growth of AlN by densification at lower sintering temperature. Additionally, the control of electrical conductivity of SiC as well as AlN was studied by formation of insulating grain boundary phase. The resistivity of SiC was successfully enhanced to 10^<12> from 10^3 Ωcm by precipitating insulating grain boundary phase at two facial boundaries

虽然氮化铝陶瓷本质上是一种绝缘体，但导电氮化铝陶瓷已成为半导体制造设备中的机械部件。我们的研究小组报告说，通过沉淀低于2 vol.%的稀土碳化氧晶界相，可以使AlN陶瓷导电而不失去其固有的高导热性。然而，高温热处理制备稀土氧碳化物晶界相导致AlN晶粒长大，导致导电AlN的断裂强度显著降低。为了通过降低烧结温度来抑制晶粒的生长，讨论了烧结助剂的组成。添加Y_2O_3-CeO_2复合添加剂可以提高导电AlN的断裂强度，并可能在较低的烧结温度下通过致密化来抑制AlN的晶粒长大。此外，还研究了绝缘晶界相的形成对SiC和AlN电导率的控制。通过在两个晶界处析出绝缘晶界相，SiC的电阻率由10^3 Ωcm提高到10^<12>

项目成果

希土類酸炭化物粒界相による高熱伝導性窒化アルミニウムセラミックスの電気伝導度制御

稀土碳氧化物晶界相控制高导热氮化铝陶瓷的电导率

• 发表时间: 2011
• 作者: 楠瀬尚史;関野徹;新原皓一
• 通讯作者: 新原皓一

オキシカーバイド粒界相によるAlNセラミックスの電気伝導度制御

碳氧化物晶界相控制 AlN 陶瓷的电导率

• 发表时间: 2011
• 作者: 高島良平;楠瀬尚史
• 通讯作者: 楠瀬尚史

Si_3N_4/BN ナノ複合材料の高温特性

Si_3N_4/BN纳米复合材料的高温性能

• 发表时间: 2012
• 期刊: 材料の科学と工学
• 作者: 楠瀬尚史;新原晧一
• 通讯作者: 新原晧一

高放熱材料の設計と開発

高散热材料的设计与开发

• 发表时间: 2012
• 作者: 赤嶺大志;板倉賢;他;楠瀬尚史
• 通讯作者: 楠瀬尚史

Effect of Carbon Content on Synthesis of SiC/BN Nanocomposite Powders by Carbothermal Reduction-Nitridation of Borosilicate Glass

碳含量对硼硅酸盐玻璃碳热还原氮化合成SiC/BN纳米复合粉体的影响

• 发表时间: 2009
• 作者: T. Kusunose;T. Sekino;Y. Ando
• 通讯作者: Y. Ando