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Thermalization dynamics of high-density electron-hole systems involving Auger recombination processes

Thermalization dynamics of high-density electron-hole systems involving Auger recombination processes
涉及俄歇复合过程的高密度电子空穴系统的热化动力学
批准号:
21740227
负责人:
NAKA Nobuko
金额:
$2.75万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011

项目摘要

项目成果

相关文献

中文摘要
翻译
在高密度电子-空穴系统中,伴随着非辐射复合的俄歇复合过程等多体相互作用在决定载流子动力学中起着至关重要的作用。我们利用光谱方法对激子和自由载流子的热化动力学进行了实验研究。我们成功地建立了纳秒时间分辨回旋共振方法,探测了氧化物半导体中由光激发激子产生的自由载流子,并找出了空位状态下自由激子和囚禁激子之间的关联。这使得定量讨论激子两体碰撞自由载流子的形成动力学成为可能。
英文摘要
In high-density electron-hole systems, many-body interactions such as an Auger recombination process which accompanies non-radiative recombination play an essential role in determining the carrier dynamics. We experimentally pursued thermalization dynamics of excitons and free carriers by using spectroscopic methods covering a wide spectral range. We have succeeded in establishing the nanosecond time-resolved cyclotron resonance method which probes free carriers produced by optically excited excitons in an oxide semiconductor, and find out correlation between the free and trapped excions at the vacancy state. This made it possible to quantitatively discuss formation dynamics of free carriers via two-body collisions of excitons.
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