Development of Cherenkov EUV source using plasma devices

使用等离子体设备开发切伦科夫 EUV 源

• 批准号: 21740398
• 负责人: INUBUSHI Yuichi
• 金额: $ 2.75万
• 依托单位: The Institute of Physical and Chemical Research (2010-2011)Osaka University (2009)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21740398/
• 关键词: 高エネルギー密度科学; プラズマデバイス; チェレンコフ光; 超短パルスレーザー; EUV光

In this study, I investigated structure of an emitter and electron beam condition for Cherenkov EUV radiation. I found Scandium is the most efficient emitter in water-window region. In order to enhance the efficiency of Cherenkov EUV radiation, new emitter with periodic structures is proposed. Slope temperature and period of emitter structure are optimized, and intensity of Cherenkov EUV radiation is calculated. These results show the road map for efficient Cherenkov EUV radiation.

在这项研究中，我研究了切伦科夫 EUV 辐射的发射器结构和电子束条件。我发现钪是水窗区域最有效的发射体。为了提高切伦科夫极紫外辐射的效率，提出了具有周期性结构的新型发射器。对发射极结构的斜率温度和周期进行了优化，并计算了切伦科夫EUV辐射强度。这些结果显示了高效切伦科夫 EUV 辐射的路线图。

项目成果

Plasma photonic devices with complex refractive index in EUV region

EUV 区域具有复折射率的等离子体光子器件

• 发表时间: 2010
• 期刊: J. Phys. (Accepted)
• 作者: Y. Inubushi;et. al
• 通讯作者: et. al