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Development of Cherenkov EUV source using plasma devices

Development of Cherenkov EUV source using plasma devices
使用等离子体设备开发切伦科夫 EUV 源
批准号:
21740398
负责人:
INUBUSHI Yuichi
金额:
$2.75万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011

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相关文献

中文摘要
翻译
本文研究了切伦科夫极紫外光辐射的发射体结构和电子束条件。我发现钪是水窗区最有效的发射器。为了提高切伦科夫EUV辐射的效率,提出了一种具有周期结构的新型发射体。优化了发射极结构的斜率温度和周期,计算了切伦科夫EUV辐射强度。这些结果显示了高效切伦科夫极紫外光辐射的路线图。
英文摘要
In this study, I investigated structure of an emitter and electron beam condition for Cherenkov EUV radiation. I found Scandium is the most efficient emitter in water-window region. In order to enhance the efficiency of Cherenkov EUV radiation, new emitter with periodic structures is proposed. Slope temperature and period of emitter structure are optimized, and intensity of Cherenkov EUV radiation is calculated. These results show the road map for efficient Cherenkov EUV radiation.
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Plasma photonic devices with complex refractive index in EUV region
EUV 区域具有复折射率的等离子体光子器件
DOI: --
发表时间: 2010
期刊: J. Phys. (Accepted)
影响因子: --
作者: [Y. Inubushi, et. al]
通讯作者: et. al
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