Formation of Ohmic hole injection in organic semiconductor films

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Current density-voltage characteristics of organic hole-only devices were evaluated when thickness of molybdenum trioxide between an ITO anode and an organic layer was changed. We found that use of optimized molybdenum trioxide thickness induces formation of Ohmic hole injection resulting from reduced hole injection barrier. Hole mobilities of a variety of organic layers were able to be estimated by analyzing the current density-voltage characteristics with a space-charge-limited current theory.