Study of Erbium-Doped Silicon Oxide Film for Optical Emitter

光发射器用掺铒氧化硅薄膜的研究

• 批准号: 21760249
• 负责人: YODA Hidehiko
• 金额: $ 2.83万
• 依托单位: Utsunomiya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21760249/
• 关键词: シリコン; 光エミッタ; シリコン酸化膜

Er-doped silicon oxide films (SiOx:Er) were deposited under various conditions and their optical and structural characteristics were evaluated. It was experimentally demonstrated that the composition (Si:O:Er) and band-gap energy of SiOx:Er films can be controlled by the sputtering condition of gas and/or temperature. A prototype of SiOx:Er optical emitter was fabricated and its PL characteristic was evaluated. It was demonstrated that the SiOx:Er film is emitted at the wavelength of 1534nm.

Er掺杂的氧化硅薄膜（SiOx：Er）的沉积在各种条件下，其光学和结构特性进行了评价。实验表明，通过溅射气体和温度的调节，可以控制SiOx：Er薄膜的组分（Si：O：Er）和禁带宽度。制作了SiO_x：Er光发射器原型并评估了其PL特性。实验结果表明，SiOx：Er薄膜的发射波长为1534nm。

项目成果

Miniaturized Spot Size Converters for Coupling between Single-Mode Optical Fibers and Silicon Photonic Circuits

用于单模光纤和硅光子电路之间耦合的小型化光斑尺寸转换器

• 发表时间: 2010
• 作者: K.Shiraishi;H.Yoda;C.Tsai
• 通讯作者: C.Tsai

High-Index-Layer Coating on a Lensed Fiber Endface for Enhanced Focusing Power

透镜光纤端面上的高折射率层涂层可增强聚焦能力

• 发表时间: 2009
• 期刊: J.Lightwave Technol. vol.27, no.7
• 作者: K.Shiraishi;N.Kawasaki;H.Yoda;K.Watanabe;M.Umetsu;T.Hitomi;K.Muro
• 通讯作者: K.Muro