Study of Erbium-Doped Silicon Oxide Film for Optical Emitter
Study of Erbium-Doped Silicon Oxide Film for Optical Emitter
批准号:
21760249
负责人:
YODA Hidehiko
金额:
$2.83万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2010
中文摘要
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英文摘要
Er-doped silicon oxide films (SiOx:Er) were deposited under various conditions and their optical and structural characteristics were evaluated. It was experimentally demonstrated that the composition (Si:O:Er) and band-gap energy of SiOx:Er films can be controlled by the sputtering condition of gas and/or temperature. A prototype of SiOx:Er optical emitter was fabricated and its PL characteristic was evaluated. It was demonstrated that the SiOx:Er film is emitted at the wavelength of 1534nm.
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会议论文
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DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[K.Shiraishi, H.Yoda, C.Tsai]
通讯作者:
C.Tsai
High-Index-Layer Coating on a Lensed Fiber Endface for Enhanced Focusing Power
透镜光纤端面上的高折射率层涂层可增强聚焦能力
DOI:
--
发表时间:
2009
期刊:
J.Lightwave Technol. vol.27, no.7
影响因子:
--
作者:
[K.Shiraishi, N.Kawasaki, H.Yoda, K.Watanabe, M.Umetsu, T.Hitomi, K.Muro]
通讯作者:
K.Muro
Development of tunable wavelength filter chip with remarkable productivity and optical properties
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批准号:23560385
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.41万
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财政年份:2011
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负责人:YODA Hidehiko
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依托单位: