Clarification of growth mechanism of carbon nanotubes by arc plasma evaporation

采用电弧等离子体蒸发法制备了高结晶度的单壁碳纳米管。对应于C2，Ni和Y物种在电弧等离子体中的光发射强度测量作为电弧电流的函数。利用Mie散射光谱研究了碳电极蒸发产生的颗粒的行为。利用拉曼光谱和透射电子显微镜观察来评价合成的碳纳米管的结晶性。在利用光发射光谱和Mie散射光谱获得的信息的基础上，结合对产物的评价，提出了电弧等离子体蒸发高质量碳纳米管的生长模型。

High-crystalline single-walled carbon nanotubes were mass-produced using arc plasma evaporation of carbon electrodes including Ni and Y catalysts. Optical emission intensities corresponding to C2, Ni and Y species in the arc plasma were measured as a function of arc current. The behaviors of particles yielded by evaporation of carbon electrode were also investigated using Mie scattering spectroscopy. Crystallinity of synthesized carbon nanotubes was evaluation using Raman spectroscopy and transmission electron microscopy observation. On the basis of the information obtained using optical emission spectroscopy and Mie scattering spectroscopy combined with the evaluation of products, growth model of high-quality carbon nanotubes using arc plasma evaporation was proposed.