Clarification of growth mechanism of carbon nanotubes by arc plasma evaporation
Clarification of growth mechanism of carbon nanotubes by arc plasma evaporation
批准号:
22310071
负责人:
HIRAMATSU Mineo
金额:
$12.15万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2012
中文摘要
采用电弧等离子体蒸发法制备了单壁高晶态碳纳米管,其中包括Ni和Y催化剂。测量了电弧等离子体中C2、Ni和Y物种的光发射强度随电弧电流的变化关系。用Mie散射谱研究了碳电极蒸发产生的颗粒的行为。用拉曼光谱和透射电子显微镜对合成的碳纳米管的结晶度进行了评价。根据光发射光谱和Mie散射光谱获得的信息,结合对产物的评价,提出了高质量碳纳米管的弧等离子体蒸发生长模型。
英文摘要
High-crystalline single-walled carbon nanotubes were mass-produced using arc plasma evaporation of carbon electrodes including Ni and Y catalysts. Optical emission intensities corresponding to C2, Ni and Y species in the arc plasma were measured as a function of arc current. The behaviors of particles yielded by evaporation of carbon electrode were also investigated using Mie scattering spectroscopy. Crystallinity of synthesized carbon nanotubes was evaluation using Raman spectroscopy and transmission electron microscopy observation. On the basis of the information obtained using optical emission spectroscopy and Mie scattering spectroscopy combined with the evaluation of products, growth model of high-quality carbon nanotubes using arc plasma evaporation was proposed.
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Measurement of particles in arc plasma for synthesizing single-wall carbon nanotubes using light scattering spectroscopy
使用光散射光谱法测量电弧等离子体中用于合成单壁碳纳米管的颗粒
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[A. Ando, K. Takeda, T. Ohta, M. Ito, M.Hiramatsu, T. Suzuki, S. Inoue, Y. Ando, M. Hori]
通讯作者:
M. Hori
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[A. Ando, T. Suzuki, S. Inoue, T. Ohta, M.Hiramatsu, Y. Ando, M. Ito, M. Hori]
通讯作者:
M. Hori
otical emission spectroscopy of arc plasma for synthesizing carbon nanotube
合成碳纳米管的电弧等离子体声发射光谱
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[A.Ando, T.Suzuki, S.Inoue, T.Ohta, M.Hiramatsu, Y.Ando]
通讯作者:
Y.Ando
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[A. Ando, T. Ohta, M. Ito, M. Hiramatsu, T.Suzuki, S. Inoue, Y. Ando, M. Hori]
通讯作者:
M. Hori
Fabrication of graphene-based films using remote plasma CVD
使用远程等离子体 CVD 制造石墨烯基薄膜
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[M. Jinno, H. Asano, T. Mizuno, S. Iijima, M. Hiramatsu]
通讯作者:
M. Hiramatsu
共 11 条
Development of carbon nanowall-based energy devices
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批准号:19560324
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.91万
-
财政年份:2007
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负责人:HIRAMATSU Mineo
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依托单位:
海外基金