High power laser systems with a controlled carrier-envelope phase and an over-one-octave infrared bandwidth

对大规模光参量啁啾脉冲放大系统中的非线性光学晶体拼接方案进行了优化设计。与单程结构相比，在Ⅰ型β-硼酸钡晶体中，双程结构的532 nm二次谐波激光的增强因子达到2.5。在146 ℃的环境温度下，用I型非临界相位失配的三硼酸锂晶体，将1064 nm纳秒级基频激光的峰值强度稳定性从7%提高到2%。此外，在相位失配条件下，还得到了一种简单的方法，即用参数S来计算最大二次谐波强度对应的非线性光学晶体厚度。

An optimum design of a tiling scheme with nonlinear optical crystals for a large scaleoptical parametric chirped pulse amplification system was achieved. In comparison withthe single-pass configuration, the enhancement factor of the second-harmonic laser at 532nm with the two-pass configuration is up to 2.5 in a type I beta-barium borate crystal. Thepeak-intensity stability of a nanosecond-order fundamental laser at 1064 nm is improvedfrom 7% to 2% with a type I non-critical phase-mismatching lithium triborate crystalheated at an environment temperature of 146oC. In addition, a simple method with theparameter S used to evaluate the thickness of the nonlinear optical crystal correspondingto the maximum second-harmonic intensity was achieved under the phase-mismatchingcondition.