High-efficient photocathode for high-brightness electron s ource and the coherence

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We have achieved a highly quantum efficiency(QE) and a robustness using a wide-band-gap semiconductor. A QE of InGaN-GaN superlattice is about 1. 5% in a wavelength of 300 nm, which is tenfold higher than an ordinal photocathode such as GaAs-GaAsP superlattice. Moreover, we have also realized a high durability against residual molecules in a vacuum using the wide-band-gap semiconductor photocathode.