Mechanism of hetero nano-structure formation and electrical properties of relaxor ferroelectric thin films

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This study examined that the formation behavior of chemically ordered regions (CORs) in Pb(Mg1/3Nb2/3)O3 (PMN) thin film. CORs nucleated at the crystallization temperature of 650˚C, which was as half as the processing temperature for bulk PMN crystals. The formation of CORs was occurred mainly by nucleation under the post annealing treatments at 700˚C or 800˚C, and they grow by contacting each other. An atomic resolution compositional analysis was attempted to directly detect Mg/Nb atomic arrangements in the PMN lattice. These results show that the nano-structure design of PMN, inhibition of the growth of COR, would improve electrical properties of PMN.