Electronic structures near quantum critical points studied by infrared spectroscopy under high pressure

在这项工作中，SrFe 2As 2和CeRhIn 5的电子结构进行了研究，在高压高达8 GPa（80，000巴），并在低温下至6 K使用红外光谱。 这些化合物在4 GPa（SrFe 2As 2）和2 GPa（CeRhIn 5）以上的高压下成为超导体，最近吸引了凝聚态物理学家的大量兴趣。 为了产生高压，使用了金刚石对顶砧单元（DAC），并且为了对DAC中包含的小样品进行红外光谱分析，使用了来自SPring-8的高亮度红外同步加速器辐射。 测量结果表明，这些化合物的电子结构受到外压的强烈影响，并对此进行了详细分析。

In this work, the electronic structures of SrFe2As2 and CeRhIn5 were studied under high pressure up to 8 GPa (80,000 bar) and at low temperatures down to 6 K using infrared spectroscopy. These compounds become superconducting under high pressure above 4 GPa (SrFe2As2) and 2 GPa (CeRhIn5), and have attracted a lot of recent interest from condensed matter physicists. To generate high pressure, a diamond anvil cell (DAC) was used, and to perform infrared spectroscopy on a small sample contained in DAC, the highly bright, infrared synchrotron radiation from SPring-8 was utilized. The measured results showed that the electronic structures of these compounds are strongly affected by the external pressure, which were analyzed in detail.