Development of electric field sensor with optically modulated scatterer

基于光调制散射体的调制散射技术研制了电场测量传感器。采用半导体作为散射体，用能量大于散射体带隙能量的光子照射半导体，可以调制散射截面。采用未掺杂锗作为光调制散射体，探测的时间响应比以往研制的介电散射体系统快十倍。该传感器在微波区获得了与金属偶极子元件光学电场传感器几乎相同的灵敏度。该传感器可以测量电场的方向、振幅和相位，并且可以随入射光直径的变化而改变空间分辨率。

Electric field measurement sensor based on the modulated scattering technique with optically modulated scatterer had developed. A semiconductor is used as the scatterer, and illumination of the semiconductor with photons of energy larger than the band-gap energy of the scatterer, the scattering cross section can modulate. Undoped germaniumis used as the optically modulated scatterer, time response of the detection is ten times faster than the previously developed dielectric scatterer system. This sensor obtained almost the same sensitivity of optical electric field sensor with metallic dipole elements in microwave region. This sensor can measure the direction, amplitude, and phase of electric field and can change the spatial resolution with varying the diameter of illuminated light.