study of magnetic properties in the vicinity of the spin accumulation interface

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We show that lateral spin valves with NiFe/MgO/Ag junctions enables efficient spin injection, which leads to the spin accumulation signal increasing 100-fold. The effective magnetic field of several Tesla in the vicinity of the interface may be a powerful tool to investigate and control spin-related phenomena in various materials. 5d iridium oxide IrO2 and ferromagnetic semiconductor EuS are attached to the Ag with large spin accumulation and then spin current is injected into these materials. Large magnitude of spin Hall effect and a change of the sign of the conversion of spin current to charge current near its Curie temperature are observed.