High-pressure (GPa) impedance measurements based on an indentation-induced local stress field and development of a new glass electrolyte

导电和介电材料在高压下的电测量（按GPa排序）揭示了轨道重叠、电子状态、转变温度变化和激活体积的重要信息。在这项研究中，我们展示了一种新的高压阻抗测量方法，利用压痕诱发的局部应力场测量高达~4 GPa的高压阻抗。目前的系统不需要任何压力介质或压力校准。在500℃时，10mol % y2o3掺杂氧化锆中O2离子传导的δ v估计为3.0 cm3 mol-1。从500℃到600℃，δ v随温度升高而增大。该技术还允许通过将压痕载荷-深度剖面曲线的实验数据与赫兹弹性模型拟合来同时确定有效弹性模量。实验值与理论值基本一致。

Electrical measurements of conducting and dielectric materials under high pressures (in the order of GPa) reveal important information regarding orbital overlaps, electronic states, changes in transition temperatures, and activation volumes. In this study, we demonstrate a new method for high-pressure impedance measurements, up to ~4 GPa, utilizing an indentation-induced local stress field. The current system does not require any pressure mediums or pressure calibrations. The deltaV for O2- ion conduction in 10 mol% Y2O3-doped zirconia at 500oC was estimated to be 3.0 cm3 mol-1. deltaV increased with increasing temperatures from 500 to 600oC. The technique also allows the concurrent determination of the effective elastic modulus by fitting the experimental data obtained from the indentation load-depth profile curves with the Hertzian elastic model. The experimental values were consistent with the theoretical values.