Verallgemeinerte Ferninfrarot-Ellipsometrie von Ladungsträger-Magnetfeld-Effekten in III-V Verbindungshalbleiter Schichtstrukturen

III-V族化合物半导体层结构中电荷载流子磁场效应的广义远红外椭圆光度法

• 批准号: 5418143
• 负责人: Professor Dr. Mathias Schubert
• 金额: --
• 依托单位: Department of Electrical and Computer Engineering
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2004
• 资助国家: 德国
• 起止时间: 2003-12-31 至 2006-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5418143?language=en
• 关键词: Verallgemeinerte; Ferninfrarot; Ellipsometrie; von; Ladungstr

The electron and hole effective mass m* and mobility u, and their dependence an the carrier concentration N shall be accurately determined using magnetooptic ellipsometry for exemplary multinary alloy zincblende group-III-group-V semiconductors. Materials of technological importance and current scientific interest investigated in this proposal are AIGaInP, and boron or nitrogen diluted InGaAs alloys, respectively. They can be grown n- or p-type with sufficiently high values of N, and u, and with excellent crystal quality by metal-organic vaporphase-epitaxy. When brought into magnetic fields, the free carriers cause birefringence at far-infrared wavelengths providing access to N, m*, and ,u independently from each other. Tools for the determination of the complex-valued magnetooptic birefringence in semiconductor layer structures are lacking completely at present. We will (1) setup a new far-infrared magnetooptic ellipsometer capable of reaching B = ±6 Tesla, and T = 4K ... 293K at the sample, and (2) determine the free-carrier-induced magnetooptic birefringence of n- or p-type materials within semiconductor layer structures, as a function of the magnetic field strength and Sample temperature, by far-infrared magnetooptic generalized ellipsometry, and (3) determine m, p, N, exemplarily for n- and p-type AIGalnP, InGaNAs, and BInGaAs alloys, and subsequently evaluate the dispersion of the accessible valence and conduction bands in the vicinity of the I'-point, and elucidate optical carrier scattering mechanisms.

电子和孔有效的质量m*和迁移率u及其依赖性和载体浓度N应使用磁置椭圆测量法进行精确确定，用于示例性合金Zincblende组-IIII-GROUP-V半导体。该提案中研究的技术重要性和当前科学利益的材料分别是Aigainp，硼或氮分别稀释了Ingaas合金。它们可以具有足够高的N和U值的N或P型生长，并具有良好的晶体质量，并具有出色的晶体质量。当进入磁场时，自由载体会在远红外波长下引起双折射，从而可以访问N，M*，并彼此独立。目前，完全缺乏确定半导体层结构中复杂值的磁磁双发性双折射的工具。 We will (1) setup a new far-infrared magnetooptic ellipsometer capable of reaching B = ±6 Tesla, and T = 4K ... 293K at the sample, and (2) determine the free-carrier-induced magnetooptic birefringence of n- or p-type materials within semiconductor layer structures, as a function of the magnetic field strength and Sample temperature, by far-infrared magnetooptic generalized ellipsometry, （3）确定m，p，n，对于n-和p型Aigalnp，Inganas和Bingaas合金，并随后评估I'point附近的可访问价和可访问价和暴力带的分散体，以及ELUCIATION OLUCIATION OPTRIAD PARRISAL散射机制。