Verallgemeinerte Ferninfrarot-Ellipsometrie von Ladungsträger-Magnetfeld-Effekten in III-V Verbindungshalbleiter Schichtstrukturen

电子和空穴有效质量m* 和迁移率u，以及它们与载流子浓度N的依赖关系，应使用示例性多元合金锌铟III族-V族半导体的磁光椭圆偏振法精确确定。在该提案中研究的技术重要性和当前科学兴趣的材料分别是AIGaInP和硼或氮稀释的InGaAs合金。它们可以通过金属有机气相外延生长为具有足够高的N和u值并且具有优异的晶体质量的n型或p型。当被带入磁场时，自由载流子在远红外波长处引起双折射，从而提供彼此独立地对N、m* 和u的访问。半导体层状结构中复值磁光双折射的测量工具目前还完全缺乏。我们将（1）建立一台新的远红外磁光椭偏仪，其测量范围可达B = ±6特斯拉，T = 4K。293 K，以及（2）通过远红外磁光广义椭圆偏振法确定半导体层结构内的n型或p型材料的自由载流子诱导的磁光双折射，作为磁场强度和样品温度的函数，以及（3）确定m、p、N，示例性地用于n型和p型AlGaAs、InGaNAs和BInGaAs合金，并随后评估I '点附近的可接近的价带和导带的色散，并阐明光学载流子散射机制。

The electron and hole effective mass m* and mobility u, and their dependence an the carrier concentration N shall be accurately determined using magnetooptic ellipsometry for exemplary multinary alloy zincblende group-III-group-V semiconductors. Materials of technological importance and current scientific interest investigated in this proposal are AIGaInP, and boron or nitrogen diluted InGaAs alloys, respectively. They can be grown n- or p-type with sufficiently high values of N, and u, and with excellent crystal quality by metal-organic vaporphase-epitaxy. When brought into magnetic fields, the free carriers cause birefringence at far-infrared wavelengths providing access to N, m*, and ,u independently from each other. Tools for the determination of the complex-valued magnetooptic birefringence in semiconductor layer structures are lacking completely at present. We will (1) setup a new far-infrared magnetooptic ellipsometer capable of reaching B = ±6 Tesla, and T = 4K ... 293K at the sample, and (2) determine the free-carrier-induced magnetooptic birefringence of n- or p-type materials within semiconductor layer structures, as a function of the magnetic field strength and Sample temperature, by far-infrared magnetooptic generalized ellipsometry, and (3) determine m, p, N, exemplarily for n- and p-type AIGalnP, InGaNAs, and BInGaAs alloys, and subsequently evaluate the dispersion of the accessible valence and conduction bands in the vicinity of the I'-point, and elucidate optical carrier scattering mechanisms.