Enhancement of thermal stability of magnetoelectric material toward voltage controlled magnetic recording devices

我们提高了磁电(ME)Cr2O_3薄膜的Neel温度Tn和阻挡温度Tb，以实现压控磁记录器件。我们发现，通过形成Cr2O_3的自旋易轴方向与外加磁场方向之间的相对夹角，可以增加Tb。我们还通过制作Fe_2O_3/Cr_2O_3异质结构实验证明了TN和Tb的控制，这种异质结构是由晶格扭曲和Cr2O_3和Fe_2O_3反铁磁体之间的磁关联共同作用实现的。由于我们成功地分别展示了对TN和TB的控制，因此TN和TB的加强将是可能的。

We enhanced the Neel temperature TN and blocking temperature TB of magnetoelectric (ME) Cr2O3 film, toward the realization of voltage controlled magnetic recording devices. We found TB can be increased by forming relative angles between spin easy axis direction of Cr2O3 and direction of applied magnetic field. We also demonstrated the control of TN and TB experimentally by making Fe2O3/Cr2O3 hetero-structure, which achieved by multiple effects of both lattice distortions and magnetic correlations between Cr2O3 and Fe2O3 antiferromagnet. Since we succeeded to demonstrate the control of TN and TB individually, enhancement of both TN and TB would be possible.