Development of High-performance Rectenna Diode for Mid-infrared / THz Optical Power Conversion

在这一年中，取得的进展主要包括三个部分：1。阐明了电场浓度效应下MIM二极管的电子隧穿行为。建立了考虑MIM二极管结构和效应的电子隧穿综合模型。设计并制造了纳米粒子MIM二极管，实现了电场集中效应。2 .利用有限元方法优化了MIM二极管的结构，并利用原子层沉积技术制备了铂纳米粒子阵列。对有NPs的MIM二极管进行了表征，并证明了与没有NPs的MIM二极管相比，整流性能显著提高了约300倍。

During this year, the progress mainly including 3 parts:1. Clarify the electron tunneling behavior in MIM diodes with electric field concentration effect. Establish a comprehensive model for electron tunneling that considers the configuration and effect of the MIM diode.2. Design and fabricate MIM diodes with nanoparticles (NPs) to achieve electric field concentration effect. Optimize the configuration of the MIM diode using finite element method and fabricate a platinum NPs array using atomic layer deposition.3. Characterize the MIM diode with NPs, and demonstrate a significant improvement of ~300 times in rectification performance comparing with the MIM diode without NPs.