Development of Wide-band X-ray gamma-ray and optical-infrared integrated imaging devices by Japan's Original Surface-Activated Wafer Bonding Technology

利用日本独创的表面活性晶圆键合技术开发宽带X射线伽马射线和光学红外一体化成像器件

• 批准号: 22K18721
• 负责人: 鶴 剛
• 金额: $ 4.16万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Research (Exploratory)
• 财政年份: 2022
• 资助国家: 日本
• 起止时间: 2022-06-30 至 2024-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22K18721/
• 关键词: ゲルマニウム撮像素子; 異種半導体常温接合; X線撮像素子; 赤外線撮像素子

SiとGeの半導体結晶の接合技術「常温SAB」を用いて，0.5-100keVの広帯域X線・ガンマ線と，0.3-1.8μmの可視光・近赤外線を一気に観測可能な「Si-Ge一体型撮像素子」を提案する．検出部の厚いGe層と，読み出し部のSi回路層は半導体結晶として接合されている．X線・ガンマ線に対してGeはSiより1桁大きい質量吸収係数を持ち，光赤外線に対してGeのバンドギャップはSiの半分なので，それぞれ波長で観測帯域が広がる．読み出しはSi回路層で行うので，低雑音や小さいピクセルが可能である．いわば，GeとSiの「いいとこ取り」である．これを実現する鍵は常温SABである．本研究はこの常温SABを用いた「Si-Ge一体型撮像素子」を実現することが最終目的である．これに対し，今年度は下記を行った．(1) Si-Ge撮像素子のコンセプトの確認．(2) SABでのSi-Ge接合品質の改善，(3) Si-Ge ピクセルTEGチップ用のSi側ピクセルアレイの準備，(4) Si-Ge撮像素子の元となるSi側SOI撮像素子の試作．(1)(2)に関して，界面回復アニーリングとして試した３つのサンプルに対して，I-V特性の評価を行い，最もリーク電流が低く，PN接合の特性が得られた条件を，ベストプロセス条件と判断した．この素子に対して，逆バイアスでの光反応を評価した．Siは吸収しないIRレーザー光を照射したところ光電流が発生した．すなわちGe側で空乏層が形成されたことを確認した．以上から基本コンセプトの正しさを確認できた．(3)に関して，小型のSi-Ge TEGチップとして，研究代表者が行ってきた一連のX線SOIピクセルセンサ開発の資産であるPDD-TEG2を採用し，その準備を行った．またGeウェハの準備も進めた．すでに保持している2枚のGeウェハに対してイオン注入を実施した．

Si Ge semi-conductor bonding technology "room temperature SAB" for use, 0.5-100keV for X-ray transmission, 0.3-1.8 μ m can be used for near-red external lines. It is possible to develop a proposal for "Si-Ge all-in-one pixel". The output part of the device is thicker than Ge. The output part of the Si loop is coupled with the half-body structure of the device. X-ray. X-ray. The temperature of the Ge loop is high. The absorption capacity of the truss is very high. The absorption capacity of the truss is higher than that of the Ge loop. the temperature of the Si is the same as that of the Si loop. the wave length of the circuit is different from that of the Si loop. In this study, we use the word "Si-Ge all-in-one Pixel" in the SAB at room temperature and use the word "Si-Ge all-in-one Pixel" to show that there is a high temperature SAB temperature in room temperature. the purpose of this study is to detect the most efficient results. This year, the following is the year. (1) the Si-Ge pixel match is confirmed. (2) the Si-Ge bonding product has been improved, (3) the Si-Ge match has been prepared with "Si", and (4) the Si-Ge pixel has been prepared. (1) (2) SOI pixel preparation. (1) (2). The interface returns the error rate of the interface, the temperature, the temperature, the interface, the The reverse light reflection is sensitive. Si absorbs the IR light and illuminates the light. The light flow causes the light flow to generate light. The Ge is empty to form a confirmation device. Above, the basic information is correct. (3) the miniature Si-Ge TEG device. The research representative is responsible for the availability of information and information on the X-ray SOI. The research representative is ready to prepare for the operation of the PDD-TEG2. The research representative is ready to prepare for the completion of the operation. The representative of the research team is responsible for the completion of the operation. The representative of the research team is responsible for the completion of the operation. The representative of the research team is responsible for the completion of the operation. The representative of the research team is responsible for the completion of the operation. The representative of the research team is responsible for the completion of the operation. The representative of the research team is responsible for the completion of the operation. The representative of the research team is responsible for the preparation of the information system. The research representative is responsible for the completion of the operation. The research representative is responsible for the completion of the operation. The research representative is responsible for the completion of the operation. The representative of the research team will be prepared for the

项目成果

Xtend, the soft x-ray imaging telescope for the x-ray imaging and spectroscopy mission (XRISM)

Xtend，用于 X 射线成像和光谱任务 (XRISM) 的软 X 射线成像望远镜

• DOI: 10.1117/12.2626894
• 发表时间: 2022
• 期刊: Proceedings of the SPIE
• 作者: Mori Koji;Tomida Hiroshi;Nakajima Hiroshi;（他52名）
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A broadband x-ray imaging spectroscopy in the 2030s: the FORCE mission

• DOI: 10.1117/12.2628772
• 发表时间: 2022-08
• 作者: K. Mori;T. Tsuru;K. Nakazawa;Y. Ueda;S. Watanabe;Takaaki Tanaka;M. Ishida;H. Matsumoto;H. Awaki;H. Murakami;M. Nobukawa;A. Takeda;Y. Fukazawa;H. Tsunemi;Tadayuki Takahashi;A. Hornschemeier;T. Okajima;Will Zhang;B. Williams;T. Venters;K. Madsen;M. Yukita;H. Akamatsu;A. Bamba;T. Enoto;Yutaka Fujita;A. Furuzawa;K. Hagino;K. Ishimura;M. Itoh;T. Kitayama;S. Kobayashi;T. Kohmura;A. Kubota;M. Mizumoto;T. Mizuno;H. Nakajima;K. Nobukawa;H. Noda;H. Odaka;N. Ota;Toshiki Sato;M. Shidatsu;Hiromasa Suzuki;H. Takahashi;A. Tanimoto;Y. Terada;Y. Terashima;H. Uchida;Y. Uchiyama;H. Yamaguchi;Y. Yatsu

史上最大の恒星フレアの NICER とせいめい望遠鏡によるX線・Hα 線観測

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• 发表时间: 2023
• 作者: 井上峻;榎戸輝揚 (京大);野津湧太 (コロラド大/東工大);岩切渉 (千葉大);前原裕之;行方宏介 (NAOJ);本田敏志 (兵庫県立大) 他
• 通讯作者: 本田敏志 (兵庫県立大) 他

軟X線から硬X線の広帯域を高感度で撮像分光する衛星計画 FORCE の現状 (14)

FORCE 的现状，这是一个用于从软 X 射线到硬 X 射线的宽带高灵敏度成像和光谱学的卫星项目 (14)

• 发表时间: 2022
• 作者: 森浩二;武田彩希 (宮崎);村上弘志 (東北学院);寺田幸功 (埼玉),;鶴剛;他 FORCE WG
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Discovery of Year-scale Time Variability from Thermal X-Ray Emission in Tycho’s Supernova Remnant

• DOI: 10.3847/1538-4357/ac94cf
• 发表时间: 2022-09
• 期刊: The Astrophysical Journal
• 作者: M. Matsuda;H. Uchida;Takaaki Tanaka;H. Yamaguchi;T. Tsuru